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Group Presentations

CONFERENCE PRESENTATIONS

2016 Presentations

108. Fatih Akyol, Sriram Krishnamoorthy, Yuewei Zhang, and Siddharth Rajan. "Ultra low resistance GaN/InGaN/GaN tunnel junctions with Indium content<15%." International Workshop on Nitride Semiconductors, October 2-7, Orlando, FL (2016)

107. Fatih Akyol, Sriram Krishnamoorthy, Yuewei Zhang, Jared Johnson, Jinwoo Hwang and Siddharth Rajan. "Ultra low resistance GaN tunnel homojunctions with repeatable differential resistance and 150 kA/cm2 current." 58th Electronic Materials Conference, June 22-24, 2016, Newark, Delaware

106. Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol, Zane Jamal-Eddine, Andrew Allerman, Michael Moseley, Andrew Armstrong and Siddharth Rajan, "Engineering of Hole Transport in Tunneling Injected UV-A LEDs", International Workshop on Nitride Semiconductors (IWN 2016), October 2-7, 2016, Orlando, Florida.

105. Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol, Zane Jamal-Eddine, Andrew Allerman, Michael W. Moseley, Andrew Armstrong, and Siddharth Rajan, "Graded P-AlGaN Superlattice for Reduced Electron Overflow in Tunneling Injected UVC LEDs", 2016 Lester Eastman Conference on High Performance Devices, August 2 - 4, 2016, Bethelehem PA.

104. S. Bajaj, F. Akyol, S. Krishnamoorthy, Y. Zhang, A. Armstrong, A. Allerman, & S. Rajan, "Ultra-Wide Bandgap AlGaN channel MISFET with Low-Resistance Ohmic Contacts" in International Workshop on Nitride Semiconductors, October 2-7, Orlando, FL (2016).

103. S. Bajaj, F. Akyol, Y. Zhang, S. Krishnamoorthy, A. Armstrong, A. Allerman, & S. Rajan, "Heterostructure-Engineered Ohmics-based UBWG Al0.75Ga0.25N Channel MISFET" in IEEE Lester Eastman Conference, Aug 2-4, Bethlehem, PA (2016).

102. S. Bajaj, F. Akyol, S. Krishnamoorthy, Y. Zhang, A. Armstrong, A. Allerman, & S. Rajan, "Ultra-wide bandgap AlGaN channel MISFET with polarization engineered ohmics" in IEEE Device Research Conference (DRC), 74th Annual (2016).

101. S. Bajaj, F. Akyol, S. Krishnamoorthy, Y. Zhang, A. Armstrong, A. Allerman, & S. Rajan, "Heterostructure Engineered Ohmic Contacts to Ultra-Wide Bandgap AlGaN" in 58th Electronic Materials Conference, June 22-24, Newark, Delaware (2016).

100. Sriram Krishnamoorthy, Yuewei Zhang, Edwin Lee, Choong Hee Lee, William McCulloch, Jared Johnson, Lu Ma, Jinwoo Hwang, Yiying Wu and Siddharth Rajan, "Modeling and Demonstration of High Current MoS2/GaN Interband Tunnel Junctions ", International Workshop on Nitride Semiconductors (IWN 2016)

99. Sriram Krishnamoorthy, Edwin Lee, Choong Hee Lee, William McCulloch, Yuewei Zhang, Jared Johnson, Lu Ma, Jinwoo Hwang, Yiying Wu and Siddharth Rajan, " MoS2/ GaN Inter-band Tunnel Junctions (2D / 3D Tunnel Junctions)", WOCSEMMAD 2016 (Workshop on Compound Semiconductor Materials and Devices).

98. Sriram Krishnamoorthy, Edwin Lee, Choong Hee Lee, William McCulloch, Yuewei Zhang, Jared Johnson, Lu Ma, Jinwoo Hwang, Yiying Wu and Siddharth Rajan, "High Current Density p-MoS2/n-GaN Inter-Band 2D/3D Tunnel Junctions", 58th Electronic Materials Conference, June 22-24, 2016, Newark, Delaware

97. Choong Hee Lee, Sriram Krishnamoorthy,Dante J. O'Hara, Roberto C. Myers, Roland K. Kawakami and Siddharth Rajan,"Molecular Beam Epitaxy of GaSe on c-Sapphire(0001) Using Valved Se Cracking Source", 58th Electronic Materials Conference, June 22-24, 2016, Newark, Delaware

 

2015 Presentations

96. Zhichao Yang, Yuewei Zhang, Digbijoy N. Nath, Jacob B. Khurgin and Siddharth Rajan, “Modeling and Experimental Demonstration of Sub-10 nm Base III-Nitride Tunneling Hot Electron Transistors”, 73rd Device Research Conference (DRC), Columbus, OH.

95. Zhichao Yang, Yuewei Zhang, Digbijoy N. Nath, Jacob B. Khurgin and Siddharth Rajan, “GaN Tunneling Hot Electron Transistors with Common Emitter Current Gain”, 57th Electronic Materials Conference, Columbus, OH.

94. Edwin W. Lee II, C. H. Lee, P. K. Paul, L. Ma, W. D. McCulloch, S. Krishnamoorthy, Y. Wu, A. R. Arehart, S. Rajan, "Electrical and Optical Characterization of MoS2/GaN Heterojunctions Formed by Film Transfer", 11thTopical Workshop on Heterostructure Microelectronics, Takayama, Japan.

93. Edwin W. Lee II, C. H. Lee,  P. K. Paul, L. Ma, W. D. McCulloch, S. Krishnamoorthy, Y. Wu, A. R. Arehart, S. Rajan,  "Electrical and Optical Characterization of MoS2/GaN Heterojunctions Formed by Film Transfer", International Symposium on Compound Semiconductors, University of California-Santa Barbara.

92. Edwin W. Lee II, C. H. Lee,  P. K. Paul, L. Ma, W. D. McCulloch, S. Krishnamoorthy, Y. Wu, A. R. Arehart, S. Rajan, "Electrical and Optical Characterization of MoS2/GaN Heterojunctions Formed by Film Transfer", 57th Electronic Materials Conference (EMC), The Ohio State University.

91. (Invited) Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol and Siddharth Rajan, "Tunnel Junctions for III-Nitride Ultraviolet Optoelectronics", 42nd International Symposium on Compound Semiconductors June 28-July 2, 2015 University of California, Santa Barbara, CA, 2015.

90. Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol, Sadia Khandaker Monika, Andrew Allerman, Michael W. Moseley, Andrew Armstrong, and Siddharth Rajan, “Polarization engineered Al0.55Ga0.45N tunnel junctions for ultraviolet emitters”, 11th International Conference on Nitride Semiconductors (ICNS-11), Beijing, China (August 30th - September 4th, 2015).

89. (Invited) S. Bajaj, T.-H. Hung, F. Akyol, S. Krishnamoorthy, S. Khandaker, A. Armstrong, A. Allerman and S. Rajan, "Power switching transistors based on GaN and AlGaN channels," in 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2015

88. S. Bajaj, O. F. Shoron, P. S. Park, S. Krishnamoorthy, F. Akyol, T.-H. Hung, S. Reza, E. M. Chumbes, J. Khurgin and S. Rajan, "Density-dependent electron transport for accurate modeling of AlGaN/GaN HEMTs," in 11th Topical Workshop on Heterostructure Microelectronics (TWHM), 2015

87. Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol, Sadia Khandaker Monika, Andrew Allerman, Michael W. Moseley, Andrew Armstrong, and Siddharth Rajan, "Sub 300 nm Wavelength III-Nitride Tunnel-Injected Ultraviolet LEDs", 73rd Device Research Conference (DRC), June 21-24, 2015. 

86. Yuewei Zhang, Sriram Krishnamoorthy, Jared M. Johnson, Fatih Akyol, Andrew Allerman, Michael W. Moseley, Andrew Armstrong, Jinwoo Hwang and Siddharth Rajan, "Tunneling Injection of Holes in III-Nitride Ultraviolet Emitters ", 57th Electronic Materials Conference June 24 - 26, 2015. 

85. Sriram Krishnamoorthy, Yuewei Zhang, Jared M Johnson, Fatih Akyol, Andrew Allerman, Michael W Moseley, Andrew Armstrong, Jinwoo Hwang, Siddharth Rajan," UV Tunnel Junction LEDs" WOCSEMMAD 2015 (Workshop on Compound Semiconductor Materials and Devices) February, 2015

84. Sanyam Bajaj, Omor F Shoron, Pil Sung Park, Sriram Krishnamoorthy, Fatih Akyol, Ting-Hsiang Hung, Shahed Reza, Eduardo M Chumbes, Jacob B Khurgin and Siddharth Rajan, "Density-Dependent Electron Transport for Accurate Modeling of AlGaN/GaN HEMTs", 73rd Device Research Conference (DRC), June, 2015

83. S. Bajaj, O. F. Shoron, P. S. Park, S. Krishnamoorthy, F. Akyol, T.-H. Hung, S. Reza, E. M. Chumbes, J. Khurgin and S. Rajan, "Density and field dependence of two-dimensional electron gas velocity in GaN," in 57th Electronic Materials Conference (EMC), 2015

82. Choong Hee Lee, William McCulloch, Edwin W. Lee II, Lu Ma, Sriram Krishnamoorthy, Jinwoo Hwang, Yiying Wu, and Siddharth Rajan, "Transferred large area single crystal MoS2 field effect transistors", 57th Electronic Materials Conference (EMC), Columbus, OH (2015)

2014 Presentations

81. Edwin W. Lee II, M. R. Laskar, D. N. Nath, L. Ma, C. H. Lee, T. Kent, Z. Yang, R. Mishra, M. A. Roldan, J.-C. Idrobo, S. T. Pantelides, S. J. Pennycook, R. Myers, Y. Wu, S. Rajan, "p-type conductivity in MoS2 by Nb doping", 56th Electronic Materials Conference (EMC), Univeristy of California-Santa Barbara, June 2014.

80. Edwin W. Lee II, M. R. Laskar, D. N. Nath, L. Ma, C. H. Lee, T. Kent, Z. Yang, O. F.  Shoron, R. C. Myers, Y. Wu, S. Rajan, "P-Type Conductivity in MoS2 and WS2 by Nb Doping", 2014 MRS Spring Meeting, San Francisco, CA, April 2014.

79. Zhichao Yang, Digbijoy N. Nath, Yuewei Zhang, Jacob Kkurgin and Siddharth Rajan, “Common Emitter Current and Voltage Gain in III-Nitride Tunneling Hot Electron Transistors”, Lester Eastman Conference on High Performance Devices (LEC), Ithaca, NY (2014)

78. Zhichao Yang, Digbijoy N. Nath and Siddharth Rajan, “Room temperature negative differential resistance in a GaN-based Tunneling Hot Electron Transistor”, 56th Electronic Materials Conference, Santa Barbara, CA (2014)

77. Zhichao Yang, Digbijoy N. Nath and Siddharth Rajan, “N-polar III-Nitride Tunneling Hot Electron Transfer Amplifier”, 72nd Device Research Conference (DRC), Santa Barbara, CA (2014)

76. Zhichao Yang, Digbijoy N. Nath and Siddharth Rajan, “Room temperature negative differential resistance in a GaN-based Tunneling Hot Electron Transistor”, 72nd Device Research Conference (DRC), Santa Barbara, CA (2014)

75. O Shoron, M Boucherit, CA Jackson, TA Cain, MLC Buffon, C Polchinski, S Stemmer, S Rajan, "Modulation of over 10 14 cm− 2 electrons at the SrTiO3/GdTiO3 heterojunction" Device Research Conference (DRC), 2014 72nd Annual

74. Omor F Shoron ,M. Boucherit ,C. A. Jackson ,S. Raghavan ,C. Polchinski ,S. Stemmer ,S. Rajan "Improvement of Charge Modulation in SrTiO3/GdTiO3 HFET" 2014 MRS Spring Meeting and Exhibit

2013 Presentations

73. Digbijoy N. Nath, Zhichao Yang, Pil Sung Park and Siddharth Rajan, “III-nitride tunnel injection hot electron transfer amplifier with common-emitter gain”, International Semiconductor Device Research Symposium, Dec 11-13 (2013) Bethesda, MD
72. Selcu, Camelia, et al. "Investigation of the electronic transport in polarization-induced nanowires using conductive atomic force microscopy (AFM)." APS Meeting Abstracts. Vol. 1. 2013.

71. Overcoming nitride led efficiency droop by tunneling based carrier regeneration

Fatih Akyol, Sriram Krishnamoorthy, and Siddharth Rajan, International Semiconductor Research Conference (ISDRS) December, 2013.

70. MBE growth of N-polar InGaN under N-rich conditions

Fatih Akyol, Masihhur Laskar, Craig Pochinski, and Siddharth Rajan, Electronic Materials Conference 2013.

69. Interface Charge Engineering in GaN-based MIS-HEMTs

Ting-Hsiang Hung, Sriram Krishnamoorthy, Digbijoy Neelim Nath, Pil Sung Par and Siddharth 
Rajan, The 1st IEEE Workshop on Wide Bandgap Power Devices & Applications (WiPDA), October 27-29 2013, Columbus OH, USA

68. Demonstration of III-nitride tunnel injection electron transfer amplifier (THETA)", International Semiconductor Device Research Symposium

Digbijoy N Nath, Zhichao Yang, Pil Sung Park, Siddharth Rajan, Dec 11-13, 2013, Bethesda, MD.

67. Demonstration of III-nitride tunnel injection hot electron transfer amplifier (THETA)

Digbijoy N. Nath, Zhichao Yang, Pil Sung Park, and Siddharth Rajan, 10thInternational Conference on Nitride Semiconductors, August 2013, Washington D. C. (USA)

66. Unipolar vertical transport characteristics of III-nitride heterostructures

Digbijoy N. Nath, C.-Y. Lee, Zhichao Yang, Pil Sung Park, Y.-R. Wu and Siddharth Rajan, 10thInternational Conference on Nitride Semiconductors, August 2013, Washington D. C. (USA) [poster]

65. Percolation-based transport in unipolar III-nitride heterostructures

Digbijoy N. Nath, Pil Sung Park, Zhichao Yang and Siddharth Rajan,55th Electronics Materials Conference, June 25-28 2013, South Bend, IN (USA)

64. SrTiO3/GdTiO3 heterostructure field effect transistors

OF Shoron, M Boucherit, CA Jackson, P Moetakef, S Stemmer, S Rajan   71st Annual Device Research Conference (DRC), 2013 , South Bend, IN

63. III-Nitride Tunnel Junctions: Device Engineering and Applications (Invited)

Siddharth Rajan, Sriram Krishnamoorthy, Fatih Akyol, 10th Topical Workshop on Heterostructure Microelectronics September 2-5, 2013 in Hakodate, Japan

62. Tunnel Injection of Holes in GaN using GdN/GaN heterojunction

Sriram Krishnamoorthy, Rohan Mishra, Oscar Restrepo, Jing Yang, Roberto Myers, Wolfgang Windl, and Siddharth Rajan, 10th International Conference on Nitride Semiconductors, Washington, DC 2013

61. Record High Current Density ( 776 kA/cm2) InGaN/GaN Resonant Tunneling Diodes Using Polarization Induced Barriers

Tyler A Growden, Sriram Krishnamoorthy, Siddharth Rajan and Paul Berger, 10th International Conference on Nitride Semiconductors, Washington, DC 2013.

60. Electrical Characterization of MoS2/GaN Heterojunctions

Edwin W Lee, M.R. Laskar, Lu Ma, pil Sung Park, Sriram Krishnamoorthy, Digbijoy N Nath, Yiying Wu, and Siddharth Rajan, 10th International Conference on Nitride Semiconductors, Washington, DC 2013.

59. Interface charge and electron transport in GaN- Based MIS-HEMTs

 Ting-Hsiang Hung, Sriram Krishnamoorthy, Digbijoy Nath, Pil Sung Park, and Siddharth Rajan, 10th International Conference on Nitride Semiconductors, Washington, DC 2013.

58. Growth and Electrical Characterization of MoS2/GaN Heterojunctions

Edwin W Lee, M.R. Laskar, Lu Ma, pil Sung Park, Sriram Krishnamoorthy, Digbijoy N Nath, Yiying Wu, and Siddharth Rajan, Electronic Materials Conference 2013, South Bend, IN.

57. Single Crystal (0001) Oriented MoS2 by CVD

Masihhur R. Laskar, Lu Ma, Santhakumar K, Pil Sung Park, Sriram Krishnamoorthy,Edwin Lee II, Digbijoy N. Nath, Edwin Lee II, Ye Shao, Y. J. Moon, Wu Lu, Yiying Wu, Siddharth Rajan, Electronic Materials Conference 2013, South Bend, IN.

56. Interface charge effects on electron transport in Al2O3/AlGaN/GaN

Ting-Hsiang Hung, Sriram Krishnamoorthy, Digbijoy Nath, Pil Sung Park, and Siddharth Rajan, Electronic Materials Conference 2013, South Bend, IN

55. Incorporation of GaN/InGaN and GdN/GaN tunnel junctions in commercial III-nitride LEDs

Sriram Krishnamoorthy, Fatih Akyol, and Siddharth Rajan, Electronic Materials Conference 2013, South Bend, IN

54. Efficient hole injection in GdN/GaN heterojunction

Sriram Krishnamoorthy, Rohan Mishra, Oscar Restrepo, Jing Yang, Roberto Myers, Wolfgang Windl, and Siddharth Rajan, Electronic Materials Conference 2013, South Bend, IN .

53. Interfacial Charge Properties of Atomic Layer Deposited Dielectric/III-nitride Interfaces

Ting-Hsiang Hung, Michele Esposto, Digbijoy Neelim Nath, Sriram Krishnamoorthy, Pil Sung Park, and Siddharth Rajan, MRS Spring meeting 2013, San Fransisco, CA.

52. Study of Interfacial Charge Properties and Engineering of Atomic Layer Deposited Dielectric/III-nitride Interfaces

 Ting-Hsiang Hung, Michele Esposto, Digbijoy Neelim Nath, Sriram Krishnamoorthy, Pil Sung Park, and Siddharth Rajan, CS Mantech 2013, New Orleans.

51. CVD-grown Single Crystal Layered MoS2

Masihhur R. Laskar, Lu Ma, Santhakumar K, Pil Sung Park, Sriram Krishnamoorthy, Digbijoy N. Nath, Edwin Lee II, Ye Shao, Y. J. Moon, Wu Lu, Yiying Wu, Siddharth Rajan, MRS Spring meeting 2013, San Fransisco, CA.

2012 Presentations

50. III-Nitride Interband Tunneling Devices

     Sriram Krishnamoorthy , Fatih Akyol, Jing Yang, Pil Sung Park, Roberto Myers, Siddharth Rajan, IEEE Lester Eastman Conference on High Performance Devices, Brown University, Aug 7-9 2012

49. GdN nano-islands enabled inter-band tunneling in III- Nitrides

     Sriram Krishnamoorthy , Jing Yang, Pil Sung Park, Roberto Myers, Siddharth Rajan, Electronic Materials Conference (EMC), June 2012 

48. Record low tunnel junction specific resistivity (< 3X10^-4 Ohm cm^2) in GaN inter-band tunnel junctions

     Sriram Krishnamoorthy , Fatih Akyol, Jing Yang, Pil Sung Park, Roberto Myers, Siddharth Rajan, Device Research Conference (DRC), 2012 69th Annual , June 2012 

47. Methods for Attaining High Interband Tunneling Current in III-Nitrides

      Tyler A. Growden, Sriram Krishnamoorthy, Digbijoy Nath, Anisha Ramesh, Siddharth Rajan, and Paul R. Berger,70th Device Research Conference, June 18-20, 2012, University Park, PA (USA) 

46. The Efficiency Droop Characteristics of Reversed Polarization (N-polar) GaN Light Emitting Diodes (LEDs)

      Fatih Akyol, Digbijoy N. Nath, Sriram Krishnamoorthy , Pil Sung Park and Siddharth Rajan, 54th Electronic Materials Conference, June 20-22, 2012 University Park, PA (USA) 

45. Study of the interface properties of Atomic Layer Deposited (ALD) Al2O3 on different polarities of GaN with post metal annealing (PMA)

      Ting-Hsiang Hung, Michele Esposto, Digbijoy Neelim Nath, Sriram Krishnamoorthy, Pil Sung Park, Siddharth Rajan, EMC (Electronic Materials Conference) 2012, June 20-June 22, PA

44.  Tunneling in III Nitrides

      Siddharth Rajan, WOCSEMMAD 2012, Napa Valley, CA.

43. Electrostatic tuning between 1-dimensional and 2-dimensional electron gases

      Digbijoy Nath, Pil Sung Park,Michele Esposto,  David Brown, Stacia Keller, Umesh Mishra, Siddharth Rajan, APS (American Physical Society) March 2012 Meeting, February 27–March 2 2012; Boston.

42. Electrostatic carrier doping of GdTiO3/SrTiO3 heterostructures

       Pouya Moetakef, Tyler Cain, Daneil Ouellette, Jack Zhang, Clayton Jackson, Siddharth Rajan, James Allen, Susanne Stemmer, APS (American Physical Society) March 2012 Meeting, February 27–March 2 2012; Boston, Massachusetts

41. Characterization of extreme-concentration 2DEGs at the SrTiO3/GdTiO3interface

      Clayton Jackson, Pouya Moetakef, Tyler Cain, , Siddharth Rajan, James Allen, Susanne Stemmer, APS (American Physical Society) March 2012 Meeting, February 27–March 2 2012; Boston, Massachusetts

2011 Presentations

41. 1-Dimensional Electron Gas in AlGaN/GaN HEMT by Lateral Polarization Engineering

      Digbijoy N. Nath, Pil Sung Park, Michele Esposto, David Brown, Stacia Keller, Umesh K. Mishra and Siddharth Rajan, 16th International Workshop on Physics of Semiconductor Devices, Dec 19-23, 2011, Kanpur, UP (India) 

40. Polarization-Engineered 1-Dimensional Electron Gas Arrays

      Digbijoy N. Nath, Pil Sung Park, Michele Esposto, David Brown, Stacia Keller, Umesh K. Mishra and Siddharth Rajan, MRS (Materials Research Society) Fall Meeting, Nov 28-Dec 2, 2011, Boston, MA (USA)

39. Characteristics of N-polar III-Nitride Green Light Emitting Diodes

      Fatih Akyol, Digbijoy N. Nath, Pil Sung Park, Sriram Krishnamoorthy and Siddharth Rajan,  Materials Research Society 2011 Fall Meeting, Nov 25 - Dec 2, 2011, Boston, MA, USA.

38. Study of Interface Barrier of ALD deposited Al2O3/GaN 

      Michele Esposto, Sriram Krishnamoorthy, Digbijoy N Nath, Sanyam Bajaj, Ting-Hsiang Hung, and Siddharth Rajan,MRS (Materials Research Society)Fall Meeting, Nov 28-Dec 2, 2011, Boston, MA (USA)

37. Enhanced Tunneling in GaN p n Junctions using ultra thin GdN layers

      Sriram Krishnamoorthy, Jing Yang, Pil Sung Park, Roberto Myers, and Siddharth Rajan, MRS (Materials Research Society)Fall Meeting, Nov 28-Dec 2, 2011, Boston, MA (USA)

36. Polarization-Engineered 1-Dimensional Electron Gas Arrays

      Digbijoy N. Nath, Pil Sung Park, Michele Esposto, David Brown, Stacia Keller, Umesh K. Mishra, and Siddharth Rajan. AVS (American Vacuum Society) 58th International Symposium,  Oct 31-Nov 4,  2011,  Nashville,  TN (USA)

 35. Inter-band GaN/InGaN/GaN tunnel diodes

     Sriram Krishnamoorthy, Digbijoy Nath, Sanyam Bajaj, and Siddharth Rajan, AVS (American Vacuum Society) 58th International Symposium, Oct 31-Nov 4, 2011, Nashville, TN (USA)

 34.  1-Dimensional Electron Gas in AlGaN/GaN HEMT by Lateral Polarization Engineering

        Digbijoy N. Nath, Pil Sung Park, Michele Esposto, David Brown, Stacia Keller, Umesh K. Mishra and Siddharth Rajan,  9th International Conference on Nitride Semiconductors, July 10-15, 2011, Glasgow, UK [Poster]

33.  Flattened transconducatance in highly scaled AlGaN/GaN HEMTs

       Pil Sung Park, Digbijoy Nath, Sriram Krishnamoorthy, and Siddharth Rajan, International Conference on Nitride Semiconductors (ICNS9) 2011, Glasgow, UK

32.  III-Nitride Tunnel Diodes with Record Forward Tunnel Current Density

      Sriram Krishnamoorthy, Pil Sung Park , and Siddharth Rajan , 69th Device Research Conference (Late News), UC Santa Barbara, 2011. 

31. Lateral Confinement of Electrons and Quasi-1D channel based Devices

        Digbijoy N. Nath, Pil Sung Park, Michele Esposto, David Brown, Stacia Keller, Umesh K. Mishra and Siddharth Rajan , Electronic Materials Conference 2011, Santa Barbara, CA.

 30.  Enhanced Inter-band tunneling by polarization engineering in InGaN/GaN quantum wells

        Sriram Krishnamoorthy, Aaron Arehart, Digbijoy Nath, Fatih Akyol, Pil Sung Park, Michele Esposto, Steve Ringel, Siddharth Rajan , Electronic Materials Conference 2011, Santa Barbara, CA

29.  Flattened Transconductance (gm) in a Highly Scaled AlGaN/GaN HEMT Using a Polarization-Induced 2D/3D Hybridized Channel Design

     Pil Sung Park, Digbijoy N. Nath, Sriram Krishnamoorthy, Siddharth Rajan, Electronic Materials Conference 2011, Santa Barbara, CA

28.  Defect Characterization of InGaN layer by Deep Level Transient and Optical Spectroscopies

     Emre Gur, Sriram Krishnamoorty, Zeng Zhang, Siddharth Rajan, Steven Ringel, Electronic Materials Conference 2011, Santa Barbara, CA

27.  Tunneling in III Nitrides (Invited talk)

     Siddharth Rajan, and Sriram Krishnamoorthy, WOCSEMMAD 2011, Savannah, GA .

2010 Presentations

26.  Design of GaN HEMTs for Power Switching Operation

      Michele Esposto, Pil Sung Park, Digbijoy Nath, Sriram Krishnamoorthy, Fatih Akyol, Valerio De Lecce, Alessandro Chini, and Siddharth Rajan , 19th European Workshop on Heterostructure Technology- HETECH 2010, Crete, Greece .

25.  MBE grown 540 nm N Polar LED

      Digbijoy Nath, Fatih Akyol, Emre Gur, Pil Sung Park,and  Siddharth Rajan , Late Breaking News- International Workshop on Nitrides 2010, Tampa FL .

24.  Polarization-engineered GaN/InGaN/GaN tunnel junctions

      Sriram Krishnamoorthy, Digbijoy Nath, Fatih Akyol, Pil Sung Park, Michele Esposto, and Siddharth Rajan , Late Breaking News- International Workshop on Nitrides 2010, Tampa FL .

23.  Molecular beam epitaxy of N polar InGaN

      Digbijoy Nath, Fatih Akyol, Emre Gur, Steve Ringe, and Siddharth Rajan.  Electronic Materials Conference 2010, South Bend IN .

2008 Presentations

22. Surface Passivation of AlGaN/GaN HEMTs

       Siddharth Rajan, Yi Pei, Zhen Chen, Steve P. DenBaars, and Umesh K. Mishra,Device Research Conference 2008, Santa Barbara CA .

21. Electron Transport in N-polar Vicinal AlGaN/GaN Heterostructure

      Siddharth Rajan, Yun-Hao Hsieh, Steve P. DenBaars, James S. Speck and Umesh K.    Mishra, Electronic Materials Conference 2008, Santa Barbara CA .

20. Characterization of MOCVD-Grown N-Polar GaN/AlGaN Heterostructures

      Nidhi Nidhi; Siddharth Rajan; Stacia Keller; Steven DenBaars; Umesh Mishra. Accepted Electronic Materials Conference 2008, Santa Barbara CA .

19. AlGaN Channel HEMTs Grown by PAMBE: Structural and Device Characterizations

       Sansaptak Dasgupta; Ajay Raman; Siddhath Rajan, Umesh Mishra, Accepted  Electronic Materials Conference 2008, Santa Barbara CA

18. Gate Leakage Reduction in AlGaN/GaN HEMTs Grown by Plasma-Assisted MBE

      Rongming Chu; Christiane Poblenz; Man Hoi Wong; Sansaptak Dasgupta; Siddharth Rajan; Yi Pei; Likun Shen; James Speck; Umesh Mishra, Accepted Electronic Materials Conference 2008, Santa Barbara CA

2007 Presentations

17. Electron Transport in N-polar Vicinal AlGaN/GaN Heterostructures

      Siddharth Rajan, Eric Hsieh, Steve P. DenBaars, James S. Speck and Umesh K. Mishra, WOCSEMMAD 2008, Pal Springs, USA, February 2007.

16. Migration-enhanced epitaxy of N-polar Indium Nitride

      Siddharth Rajan, Man Hoi Wong, Feng Wu, James S. Speck and Umesh K. Mishra, EMC 2007,  Las Vegas, USA, February 2007.

15. Migration-enhanced epitaxy of N-polar Indium Nitride

      Siddharth Rajan, Man Hoi Wong, Feng Wu, James S. Speck and Umesh K. Mishra, WOCSEMMAD 2007, Savannah, USA, February 2007.

2006 Presentations

14. Polarization-induced 3-Dimensional slabs in Graded AlGaN layers

John Simon, Siddharth Rajan, Kejia Wang, Huili Xing and Debdeep Jena, to be presented at 2006 MRS Fall Meeting, Boston

2005 Presentations

13. Advanced Transistor Structures Based on N-face GaN

      S. Rajan, A. Chini, M. Wong, C. Suh, Y. Fu, M. J. Grundmann, F. Wu, J. S. Speck and U. K. Mishra32nd International Symposium on

Compound Semiconductors (ISCS), Sept 18-22 2005, Europa-Park Rust, Germany

12. N-face Modulation Doped Field Effect Transistors

      S. Rajan, F. Wu, M. Wong, Y. Fu, J. S. Speck and U. K. Mishra, 6th International Conference on Nitride Semiconductors (ICNS) 2005, Aug 28- Sept 2 2005, Bremen, Germany.

11. Structural and Electrical Characterization of N-face GaN grown on C-face SiC by MBE

      Siddharth Rajan; Feng Wu; Manhoi Wong; Yenyun Fu; James S. Speck; Umesh K. Mishra, 47th Electronic Materials Conference, June 22-24 (2005), Santa Barbara, California USA.

10. Electron Mobility in Graded AlGaN Layers

      Siddharth Rajan, Tomas Palacios, Steven P. Denbaars and Umesh K. Mishra, WOCSEMMAD 2005, Miami, USA, February 2005.

 9.  Dipole Engineering in Nitride-based HEMTs

     T. Palacios, S. Rajan, A. Chakraborty, S. Keller, S. P. DenBaars, and U. K. Mishra, 208th Meeting of the Electrochemical Society, Los Angeles, October 16-21 2005

8. An Experimental Method to Identify Bulk and Surface Traps in GaN HEMTs

       A. Chini, Y. Fu, S. Rajan, J. S. Speck and U. K. Mishra, 32nd International Symposium on Compound Semiconductors (ISCS), Sept 18-22 2005, Europa-Park Rust, Germany.

7. Fabrication and Characterization of N-face GaN/AlGaN/GaN HEMTs

       A. Chini, S. Rajan., M. Wong, Y. Fu, J. S. Speck, U. K. Mishra, 63rd Device Research Conference, June 20-22 (2005), Santa Barbara, California USA

2004 Presentations

 6.  Progress in the Development of an all-MBE HEMT

      Siddharth Rajan,  Christiane Poblenz, Patrick Waltereir, Arpan Chakraborty, James S. Speck and Umesh K. Mishra, 11th Advanced Heterostructure Workshop, Hawaii, 2004.
 5. MBE-Grown AlGaN/GaN HEMTs on SiC

    Siddharth Rajan,  Christiane Poblenz, Patrick Waltereir, Arpan Chakraborty, James S.  Speck and Umesh K. Mishra, IEEE Lester Eastman Conference on High Performance Devices, August 2004, Troy, NY, USA.

4. Tailoring of Transconductance Profile for Improved Linearity in AlGaN/GaN Polarization- Doped Field Effect Transistors

    Siddharth Rajan; Xing, Huili ; Chakraborty, Arpan ; Chini, Alessandro ; Grundmann, Michael J.; Palacios, Tomas ; DenBaars, Steven P.; Jena, Debdeep ; Mishra, Umesh K.., International Workshop on Nitride Semiconductors, July 2004, Pittsburgh, PA, USA.

3. Ion implantation for unalloyed ohmic contacts to AlGaN/GaN HEMTs

        Yu, H.; McCarthy, L.; Rajan, S.; Keller, S.; Denbaars, S.P.; Speck, J.S.; Mishra, U.K.;   Device Research Conference, 2004. 62nd DRC. Conference Digest [Late News Papers volume included], 21-23 June 2004 Page(s):37 - 38 vol.1

2. Influence of the access resistance in the rf performance of mm-wave AlGaN/GaN HEMTs

     Palacios, T.; Rajan, S.; Shen, L.; Chakraborty, A.; Heikman, S.; Keller, S.; DenBaars, S.P.; Mishra, U.K, Device Research Conference, 2004. 62nd DRC. Conference Digest 21-23 June 2004 Page(s):75 - 76 vol.1

2003 Presentations 

1.  Growth and Power Performance  of MBE-grown AlGaN/GaN HEMTs

Siddharth Rajan, Patrick Waltereit, Christiane Poblenz, Sten J. Heikman, James S. Speck and Umesh K. Mishra, International Workshop for Physics of Semiconductor Devices (IWPSD), December  2003, Chennai, India.