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Publications

Updated list from Google Scholar.

2019 Publications 

147. Sohel, S., Razzak, T., Xue, H., Rahman, M., Xie, A., Beam, E., Cao, Y., Hussain, K., Khan, A., Lu, W., Rajan, S.: '(Invited) Novel channel engineering for high-performance AlGaN-based transistors', Meeting Abstracts, 2019, (25), pp. 1173

146. Chandrasekar, H., Cheng, J., Wang, T., Xia, Z., Combs, N., Freeze, C., Marshall, P., McGlone, J., Arehart, A., Ringel, S., Janotti, A., Stemmer, S., Lu, W., Rajan, S.: 'Velocity saturation in La-doped BaSnO3 thin films', Applied Physics Letters, 2019, 115, (9), pp. 092102

145. Kalarickal, N., Xia, Z., McGlone, J., Krishnamoorthy, S., Moore, W., Brenner, M., Arehart, A., Ringel, S., Rajan, S.: 'Mechanism of Si doping in plasma assisted MBE growth of beta-Ga203', 2019

144. Sarker, J., Zhang, Y., Zhu, M., Rajan, S., Hwang, J., Mazumder, B.: 'Understanding the growth mechanism of beta-(AlxGa1-x)2O3 by atom probe tomography', Microscopy and Microanalysis, 2019, 25, (S2), pp. 2508-2509

143. Razzak, T., Hwang, S., Coleman, A., Xue, H., Sohel, S., Bajaj, S., Zhang, Y., Lu, W., Khan, A., Rajan, S.: 'Design of compositionally graded contact layers for MOCVD grown high Al-content AlGaN transistors', 2019

142. Arafin, S., Hasan, S., Jamal-Eddine, Z., Wickramaratne, D., Paul, B., Rajan, S.: 'Design of AlGaN-based lasers with a buried tunnel junction for sub-300 nm emission', Semiconductor Science and Technology, 34, (7), pp. 074002

141. Joishi, C., Zhang, Y., Xia, Z., Sun, W., Arehart, A., Ringel, S., Lodha, S., Rajan, S.: 'Breakdown characteristics of Beta-(AI0.22Ga0.78)2O3/Ga2O3 field-plated modulation-doped field-effect transistors', IEEE Electron Device Letters, 2019, 40, (8), pp. 1241-1244

140. Xia, Z., Xue, H., Joishi, C., Mcglone, J., Kalarickal, N., Sohel, S., Brenner, M., Arehart, A., Ringel, S., Lodha, S., Lu, W., Rajan, S.: 'Beta-Ga2O3 Delta-doped field-effect transistors with current gain cutoff frequency of 27 GHz', IEEE Electron Device Letters, 2019, 40, (7), pp.1052-1055

139. Yang, Z., Nath, D.N., Zhang, Y., Krishnamoorthy, S., Khurgin, J., Rajan, S.: 'III-nitride tunneling hot electron transfer amplifier (THETA)', Springer, Cham, 2019, High-Frequency GaN Electronic Devices, pp. 109-157

138. Zhang, Y., Jamal-Eddine, Z., Rajan, S.: ‘Recent progress of tunnel junction-based ultra-violet light emitting diodes’, Japanese Journal of Applied Physics, 2019, 58, (SC), pp.SC0805 

137. Biswas, D., Joishi, C., Biswas, J., Thakar, K., Rajan, S., Lodha, S.: ‘Enhanced n-type beta-Ga2O3 (201) gate stack performance using Al2)3/SiO2 bi-layer dielectric’, Applied Physics Letters, 2019, 114, (21), pp. 212106

136. Xue, H., Lee, C.H., Hussian, K., Razzak, T., Abdullah, M., Xia, Z., Sohel, S.H., Khan, A., Rajan, S., Lu, W.: ‘Al0.75Ga0.25/Al0.6Ga0.4N heterojunction field effect. Transistor with fT of 40 GHz’, Appliied Physics Express, 2019, 12, (6), pp.066502

135. Ancona, M.G., Calame, J.P., Meyer, D.J., Rajan, S., Downey, B.P.: ‘Compositionally Graded Ill-N HEMTs for Improved Linearity: A Stimulation Study’, IEEE Transactions on Electron Devices, 2019, 66, (5), pp.2151-2157

134. Sohel, S., Xie, A., Beam, E., Xue, H., Razzak, T., Bajaj, S., Cao, Y., Lee, C., Lu, W., and Rajan, S.: 'Polarization Engineering of AlGaN/GaN HEMT With Graded InGaN Sub-Channel for High-Linearity X-Band Applications', IEEE Electron Device Letters, 2019, 40, (4), pp.522-525

133. Zhang, Y., Xia, Z., McGlone, J., Sun, W., Joishi, C., Arehart, A.R., Ringel, S.A., and Rajan, S.: ‘Evaluation of Low-Temperature Saturation Velocity in β -(AlₓGa₁₋ₓ)₂O₃/Ga₂O₃ Modulation-Doped Field-Effect Transistors’, IEEE Transactions on Electron Devices, 2019, pp. 1-5

131. Xia, Z., Wang, C., Kalarickal, N.K., Stemmer, S., and Rajan, S.: ‘Design of Transistors Using High-Permittivity Materials’, IEEE Transactions on Electron Devices, 2019, 66, (2), pp. 896-900

2018 Publications

132. Razzak, T., Hwang, S., Coleman, A., Xue, H., Sohel, S.H., Bajaj, S., Zhang, Y., Lu, W., Khan, A., Rajan, S.: "Design of compositionally graded contact layers for MOCVD grown high Al-conttent AlGaN transistors", Applied Physics, 2018

131. Razzak, T., Hwang, S., Bajaj, S., Zhang, Y., Jamal-Eddine, Z., Sohel, S.H., Lu, W., Rajan, S.: "RF operationin graded Alx Ga1-xN (x=0.65 to 0.82) channel transistors", Institution of Engineering and Technology, 2018, 54, (23), pp.1351-1353

130. Kong, W., Li, H., Qiao, K., Kim, Y., Lee, K., Nie, Y., Lee, D., Osadchy, T., Molnar, R.J., Gaskill, D.K., Myers-Ward, R.L., Daniels, K.M., Zhang, Y., Sundram, S., Yu, Y., Bae, S.-h., Rajan, S., Shao-Horn, Y., Cho, K., Ougazzaden, A., Grossman, J.C., and Kim, J.: ‘Polarity governs atomic interaction through two-dimensional materials’, Nature Materials, 2018, 17, (11), pp. 999-1004

129. O’Hara, D.J., Zhu, T., Trout, A.H., Ahmed, A.S., Luo, Y.K., Lee, C.H., Brenner, M.R., Rajan, S., Gupta, J.A., McComb, D.W., and Kawakami, R.K.: ‘Room Temperature Intrinsic Ferromagnetism in Epitaxial Manganese Selenide Films in the Monolayer Limit’, Nano Letters, 2018, 18, (5), pp. 3125-3131

128. Bajaj, S., Allerman, A., Armstrong, A., Razzak, T., Talesara, V., Sun, W., Sohel, S.H., Zhang, Y., Lu, W., Arehart, A.R., Akyol, F., and Rajan, S.: ‘High Al-Content AlGaN Transistor With 0.5 A/mm Current Density and Lateral Breakdown Field Exceeding 3.6 MV/cm’, IEEE Electron Device Letters, 2018, 39, (2), pp. 256-259

127. Armstrong, A.M., Klein, B.A., Colon, A., Allerman, A.A., Douglas, E.A., Baca, A.G., Fortune, T.R., Abate, V.M., Bajaj, S., and Rajan, S.: ‘Ultra-wide band gap AlGaN polarization-doped field effect transistor’, Japanese Journal of Applied Physics, 2018, 57, (7), pp. 074103

126. Gao, H., Muralidharan, S., Pronin, N., Karim, M.R., White, S.M., Asel, T., Foster, G., Krishnamoorthy, S., Rajan, S., Cao, L.R., Higashiwaki, M., von Wenckstern, H., Grundmann, M., Zhao, H., Look, D.C., and Brillson, L.J.: ‘Optical signatures of deep level defects in Ga2O3’, Applied Physics Letters, 2018, 112, (24), pp. 242102

125. Mcglone, J.F., Xia, Z., Zhang, Y., Joishi, C., Lodha, S., Rajan, S., Ringel, S.A., and Arehart, A.R.: ‘Trapping Effects in Si delta-Doped beta-Ga2O3 MESFETs on an Fe-Doped beta-Ga2O3 Substrate’, IEEE Electron Device Letters, 2018, 39, (7), pp. 1042-1045

124. Joishi, C., Xia, Z., McGlone, J., Zhang, Y., Arehart, A.R., Ringel, S., Lodha, S., and Rajan, S.: ‘Effect of buffer iron doping on delta-doped β-Ga2O3 metal semiconductor field effect transistors’, Applied Physics Letters, 2018, 113, (12), pp. 123501

123. Zhang, Y., Jamal-Eddine, Z., Akyol, F., Bajaj, S., Johnson, J.M., Calderon, G., Allerman, A.A., Moseley, M.W., Armstrong, A.M., Hwang, J., and Rajan, S.: ‘Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency’, Applied Physics Letters, 2018, 112, (7), pp. 071107

122. Xia, Z., Joishi, C., Krishnamoorthy, S., Bajaj, S., Zhang, Y., Brenner, M., Lodha, S., and Rajan, S.: ‘Delta Doped $\beta$ -Ga2O3 Field Effect Transistors With Regrown Ohmic Contacts’, IEEE Electron Device Letters, 2018, 39, (4), pp. 568-571

121. Zhang, Y., Neal, A., Xia, Z., Joishi, C., Johnson, J.M., Zheng, Y., Bajaj, S., Brenner, M., Dorsey, D., Chabak, K., Jessen, G., Hwang, J., Mou, S., Heremans, J.P., and Rajan, S.: ‘Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures’, Applied Physics Letters, 2018, 112, (17), pp. 173502

120. Sohel, S.H., Xie, A., Beam, E., Xue, H., Roussos, J.A., Razzak, T., Bajaj, S., Cao, Y., Meyer, D.J., Lu, W., and Rajan, S.: ‘X-Band Power and Linearity Performance of Compositionally Graded AlGaN Channel Transistors’, IEEE Electron Device Letters, 2018, 39, (12), pp. 1884-1887

119. Pratiyush, A.S., Krishnamoorthy, S., Kumar, S., Xia, Z., Muralidharan, R., Rajan, S., and Nath, D.N.: ‘Demonstration of zero bias responsivity in MBE grown β-Ga2O3 lateral deep-UV photodetector’, Japanese Journal of Applied Physics, 2018, 57, (6), pp. 060313

118. Zhang, Y., Joishi, C., Xia, Z., Brenner, M., Lodha, S., and Rajan, S.: ‘Demonstration of β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistors’, Applied Physics Letters, 2018, 112, (23), pp. 233503

117. Joishi, C., Rafique, S., Xia, Z., Han, L., Krishnamoorthy, S., Zhang, Y., Lodha, S., Zhao, H., and Rajan, S.: ‘Low-pressure CVD-grown β-Ga2O3 bevel-field-plated Schottky barrier diodes’, Applied Physics Express, 2018, 11, (3), pp. 031101

116. Pratiyush, A.S., Xia, Z., Kumar, S., Zhang, Y., Joishi, C., Muralidharan, R., Rajan, S., and Nath, D.N.: ‘MBE-Grown $\beta $-Ga 2 O 3-Based Schottky UV-C Photodetectors With Rectification Ratio~ 10 7.’, IEEE Photonics Technology Letters, 2018, 30, (23), pp. 2025-2028

2017 Publications

115. Zhang, Y., Krishnamoorthy, S., Akyol, F., Johnson, J.M., Allerman, A.A., Moseley, M.W., Armstrong, A.M., Hwang, J., and Rajan, S.: ‘Reflective metal/semiconductor tunnel junctions for hole injection in AlGaN UV LEDs’, Applied Physics Letters, 2017, 111, (5), pp. 051104

114. Lee, C.H., Krishnamoorthy, S., Paul, P.K., O'Hara, D.J., Brenner, M.R., Kawakami, R.K., Arehart, A.R., and Rajan, S.: ‘Large-area SnSe2/GaN heterojunction diodes grown by molecular beam epitaxy’, Applied Physics Letters, 2017, 111, (20), pp. 202101

113. Bajaj, S., Yang, Z., Akyol, F., Park, P.S., Zhang, Y., Price, A.L., Krishnamoorthy, S., Meyer, D.J., and Rajan, S.: ‘Graded AlGaN Channel Transistors for Improved Current and Power Gain Linearity’, IEEE Transactions on Electron Devices, 2017, 64, (8), pp. 3114-3119

112. Krishnamoorthy, S., Xia, Z., Bajaj, S., Brenner, M., and Rajan, S.: ‘Delta-doped β-gallium oxide field-effect transistor’, Applied Physics Express, 2017, 10, (5), pp. 051102 (Featured as Spotlight article)

111. Zhang, Y., Krishnamoorthy, S., Akyol, F., Bajaj, S., Allerman, A.A., Moseley, M.W., Armstrong, A.M., and Rajan, S.: ‘Tunnel-injected sub-260 nm ultraviolet light emitting diodes’, Applied Physics Letters, 2017, 110, (20), pp. 201102 (Featured in Editor’s Picks)

110. Lee, C.H., Krishnamoorthy, S., O'Hara, D.J., Brenner, M.R., Johnson, J.M., Jamison, J.S., Myers, R.C., Kawakami, R.K., Hwang, J., and Rajan, S.: ‘Molecular beam epitaxy of 2D-layered gallium selenide on GaN substrates’, Journal of Applied Physics, 2017, 121, (9), pp. 094302

109. Lee, C.H., Lee, E.W., McCulloch, W., Jamal-Eddine, Z., Krishnamoorthy, S., Newburger, M.J., Kawakami, R.K., Wu, Y., and Rajan, S.: ‘A self-limiting layer-by-layer etching technique for 2H-MoS2’, Applied Physics Express, 2017, 10, (3), pp. 035201

2016 Publications

108. Bhardwaj, S., Sensale-Rodriguez, B., Xing, H.G., Rajan, S., and Volakis, J.L.: ‘Resonant tunneling assisted propagation and amplification of plasmons in high electron mobility transistors’, Journal of Applied Physics, 2016, 119, (1), pp. 013102

107. Zhang, Y., Krishnamoorthy, S., Akyol, F., Allerman, A.A., Moseley, M.W., Armstrong, A.M., and Rajan, S.: ‘Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes’, Applied Physics Letters, 2016, 109, (19), pp. 191105

106. Akyol, F., Krishnamoorthy, S., Zhang, Y., Johnson, J., Hwang, J., and Rajan, S.: ‘Erratum: “Low-resistance GaN tunnel homojunctions with 150 kA/cm2 current and repeatable negative differential resistance” [Appl. Phys. Lett. 108, 131103 (2016)]’, Applied Physics Letters, 2016, 109, (10), pp. 109901

105. Zhang, Y., Krishnamoorthy, S., Akyol, F., Allerman, A.A., Moseley, M.W., Armstrong, A.M., and Rajan, S.: ‘Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions’, Applied Physics Letters, 2016, 109, (12), pp. 121102

104. Zhang, Y., Allerman, A.A., Krishnamoorthy, S., Akyol, F., Moseley, M.W., Armstrong, A.M., and Rajan, S.: ‘Enhanced light extraction in tunnel junction-enabled top emitting UV LEDs’, Applied Physics Express, 2016, 9, (5), pp. 052102

103. Bajaj, S., Akyol, F., Krishnamoorthy, S., Zhang, Y., and Rajan, S.: ‘AlGaN channel field effect transistors with graded heterostructure ohmic contacts’, Applied Physics Letters, 2016, 109, (13), pp. 133508

102. Khurgin, J.B., Bajaj, S., and Rajan, S.: ‘Amplified spontaneous emission of phonons as a likely mechanism for density-dependent velocity saturation in GaN transistors’, Applied Physics Express, 2016, 9, (9), pp. 094101

101. Krishnamoorthy, S., Lee, E.W., Lee, C.H., Zhang, Y., McCulloch, W.D., Johnson, J.M., Hwang, J., Wu, Y., and Rajan, S.: ‘High current density 2D/3D MoS2/GaN Esaki tunnel diodes’, Applied Physics Letters, 2016, 109, (18), pp. 183505

2015 Publications

100. Khurgin, J.B., Bajaj, S., and Rajan, S.: ‘Elastic scattering by hot electrons and apparent lifetime of longitudinal optical phonons in gallium nitride’, Applied Physics Letters, 2015, 107, (26), pp. 262101

99. Kornblum, L., Jin, E.N., Shoron, O., Boucherit, M., Rajan, S., Ahn, C.H., and Walker, F.J.: ‘Electronic transport of titanate heterostructures and their potential as channels on (001) Si’, Journal of Applied Physics, 2015, 118, (10), pp. 105301

98. Zhang, Y., Krishnamoorthy, S., Johnson, J.M., Akyol, F., Allerman, A., Moseley, M.W., Armstrong, A., Hwang, J., and Rajan, S.: ‘Interband tunneling for hole injection in III-nitride ultraviolet emitters’, Applied Physics Letters, 2015, 106, (14), pp. 141103

97. Yang, Z., Nath, D.N., Zhang, Y., Khurgin, J.B., and Rajan, S.: ‘Common Emitter Current and Voltage Gain in III-Nitride Tunneling Hot Electron Transistors’, IEEE Electron Device Letters, 2015, 36, (5), pp. 436-438

96. Arulkumaran, S., Ng, G.I., Manoj Kumar, C.M., Ranjan, K., Teo, K.L., Shoron, O.F., Rajan, S., Bin Dolmanan, S., and Tripathy, S.: ‘Electron velocity of 6 × 107 cm/s at 300 K in stress engineered InAlN/GaN nano-channel high-electron-mobility transistors’, Applied Physics Letters, 2015, 106, (5), pp. 053502

95. Akyol, F., Krishnamoorthy, S., Zhang, Y., and Rajan, S.: ‘GaN-based three-junction cascaded light-emitting diode with low-resistance InGaN tunnel junctions’, Applied Physics Express, 2015, 8, (8), pp. 082103

94. Park, P.S., Krishnamoorthy, S., Bajaj, S., Nath, D.N., and Rajan, S.: ‘Recess-Free Nonalloyed Ohmic Contacts on Graded AlGaN Heterojunction FETs’, IEEE Electron Device Letters, 2015, 36, (3), pp. 226-228

93. Bajaj, S., Shoron, O.F., Park, P.S., Krishnamoorthy, S., Akyol, F., Hung, T.-H., Reza, S., Chumbes, E.M., Khurgin, J., and Rajan, S.: ‘Density-dependent electron transport and precise modeling of GaN high electron mobility transistors’, Applied Physics Letters, 2015, 107, (15), pp. 153504

92. Lee, C.H., McCulloch, W., Lee, E.W., Ma, L., Krishnamoorthy, S., Hwang, J., Wu, Y., and Rajan, S.: ‘Transferred large area single crystal MoS2 field effect transistors’, Applied Physics Letters, 2015, 107, (19), pp. 193503

91. Lee, E.W., Lee, C.H., Paul, P.K., Ma, L., McCulloch, W.D., Krishnamoorthy, S., Wu, Y., Arehart, A.R., and Rajan, S.: ‘Layer-transferred MoS2/GaN PN diodes’, Applied Physics Letters, 2015, 107, (10), pp. 103505

90. Yang, Z., Zhang, Y., Krishnamoorthy, S., Nath, D.N., Khurgin, J.B., and Rajan, S.: ‘Current gain above 10 in sub-10 nm base III-Nitride tunneling hot electron transistors with GaN/AlN emitter’, Applied Physics Letters, 2016, 108, (19), pp. 192101

2014 Publications

89. ee, E.W., Ma, L., Nath, D.N., Lee, C.H., Arehart, A., Wu, Y., and Rajan, S.: ‘Growth and electrical characterization of two-dimensional layered MoS2/SiC heterojunctions’, Applied Physics Letters, 2014, 105, (20), pp. 203504

88. Yang, Z., Nath, D., and Rajan, S.: ‘Negative differential resistance in GaN tunneling hot electron transistors’, Applied Physics Letters, 2014, 105, (20), pp. 202111

87. Bajaj, S., Hung, T.-H., Akyol, F., Nath, D., and Rajan, S.: ‘Modeling of high composition AlGaN channel high electron mobility transistors with large threshold voltage’, Applied Physics Letters, 2014, 105, (26), pp. 263503

86. Krishnamoorthy, S., Akyol, F., and Rajan, S.: ‘InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes’, Applied Physics Letters, 2014, 105, (14), pp. 141104

85. Ramesh, P., Krishnamoorthy, S., Rajan, S., and Washington, G.N.: ‘Energy band engineering for photoelectrochemical etching of GaN/InGaN heterostructures’, Applied Physics Letters, 2014, 104, (24), pp. 243503

84. Ma, L., Nath, D.N., Lee, E.W., Lee, C.H., Yu, M., Arehart, A., Rajan, S., and Wu, Y.: ‘Epitaxial growth of large area single-crystalline few-layer MoS2 with high space charge mobility of 192 cm2 V−1 s−1’, Applied Physics Letters, 2014, 105, (7), pp. 072105

83. Boucherit, M., Shoron, O., Jackson, C.A., Cain, T.A., Buffon, M.L.C., Polchinski, C., Stemmer, S., and Rajan, S.: ‘Modulation of over 1014 cm−2 electrons in SrTiO3/GdTiO3 heterostructures’, Applied Physics Letters, 2014, 104, (18), pp. 182904

82. Hung, T.-H., Sasaki, K., Kuramata, A., Nath, D.N., Sung Park, P., Polchinski, C., and Rajan, S.: ‘Energy band line-up of atomic layer deposited Al2O3 on β-Ga2O3’, Applied Physics Letters, 2014, 104, (16), pp. 162106

81. Krishnamoorthy, Sriram, Fatih Akyol, and Siddharth Rajan. "III-nitride tunnel junctions for efficient solid state lighting." SPIE OPTO. International Society for Optics and Photonics, 2014.

80. Hung, T., Park, P.S., Krishnamoorthy, S., Nath, D.N., and Rajan, S.: ‘Interface Charge Engineering for Enhancement-Mode GaN MISHEMTs’, IEEE Electron Device Letters, 2014, 35, (3), pp. 312-314

79. Laskar, M.R., Nath, D.N., Ma, L., Lee, E.W., Lee, C.H., Kent, T., Yang, Z., Mishra, R., Roldan, M.A., Idrobo, J.-C., Pantelides, S.T., Pennycook, S.J., Myers, R.C., Wu, Y., and Rajan, S.: ‘p-type doping of MoS2 thin films using Nb’, Applied Physics Letters, 2014, 104, (9), pp. 092104

2013 Publications

78. Stemmer, S., Chobpattana, V., Son, J., and Rajan, S.: ‘(Invited) Interface Trap Densities and Admittance Characteristics of III-V MOS Capacitors’, 2013, 50, (4), pp. 141-144

77.  Wang, Y., Luo, X., Zhang, N., Laskar, M.R., Ma, L., Wu, Y., Rajan, S., and Lu, W.: ‘Low frequency noise in chemical vapor deposited MoS2’, in Editor (Ed.)^(Eds.): ‘Book Low frequency noise in chemical vapor deposited MoS2’ (2013, edn.), pp. 1-3

76. Yang, J., Cui, S., Ma, T.P., Hung, T.-H., Nath, D., Krishnamoorthy, S., and Rajan, S.: ‘A study of electrically active traps in AlGaN/GaN high electron mobility transistor’, Applied Physics Letters, 2013, 103, (17), pp. 173520

75. Mazumder, B., Esposto, M., Hung, T.H., Mates, T., Rajan, S., and Speck, J.S.: ‘Characterization of a dielectric/GaN system using atom probe tomography’, Applied Physics Letters, 2013, 103, (15), pp. 151601

74. Akyol, F., Krishnamoorthy, S., and Rajan, S.: ‘Tunneling-based carrier regeneration in cascaded GaN light emitting diodes to overcome efficiency droop’, Applied Physics Letters, 2013, 103, (8), pp. 081107

73. Boucherit, M., Shoron, O.F., Cain, T.A., Jackson, C.A., Stemmer, S., and Rajan, S.: ‘Extreme charge density SrTiO3/GdTiO3 heterostructure field effect transistors’, Applied Physics Letters, 2013, 102, (24), pp. 242909

72. Su, M., Chen, C., and Rajan, S.: ‘Prospects for the application of GaN power devices in hybrid electric vehicle drive systems’, Semiconductor Science and Technology, 2013, 28, (7), pp. 074012

71. Sung Park, P., Reddy, K.M., Nath, D.N., Yang, Z., Padture, N.P., and Rajan, S.: ‘Ohmic contact formation between metal and AlGaN/GaN heterostructure via graphene insertion’, Applied Physics Letters, 2013, 102, (15), pp. 153501

70.  Nath, D.N., Yang, Z.C., Lee, C.Y., Park, P.S., Wu, Y.R., and Rajan, S.: ‘Unipolar vertical transport in GaN/AlGaN/GaN heterostructures’, Applied Physics Letters, 2013, 103, (2), pp. 022102

69. Laskar, M.R., Ma, L., Kannappan, S., Sung Park, P., Krishnamoorthy, S., Nath, D.N., Lu, W., Wu, Y., and Rajan, S.: ‘Large area single crystal (0001) oriented MoS2’, Applied Physics Letters, 2013, 102, (25), pp. 252108

68. Krishnamoorthy, S., Kent, T.F., Yang, J., Park, P.S., Myers, R.C., and Rajan, S.: ‘GdN Nanoisland-Based GaN Tunnel Junctions’, Nano Letters, 2013, 13, (6), pp. 2570-2575

67. Krishnamoorthy, S., Akyol, F., Park, P.S., and Rajan, S.: ‘Low resistance GaN/InGaN/GaN tunnel junctions’, Applied Physics Letters, 2013, 102, (11), pp. 113503

66. Hung, T.-H., Krishnamoorthy, S., Esposto, M., Neelim Nath, D., Sung Park, P., and Rajan, S.: ‘Interface charge engineering at atomic layer deposited dielectric/III-nitride interfaces’, Applied Physics Letters, 2013, 102, (7), pp. 072105

65. Arehart, A.R., Sasikumar, A., Rajan, S., Via, G.D., Poling, B., Winningham, B., Heller, E.R., Brown, D., Pei, Y., Recht, F., Mishra, U.K., and Ringel, S.A.: ‘Direct observation of 0.57eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors’, Solid-State Electronics, 2013, 80, pp. 19-22

64.  Kim, H., Nath, D., Rajan, S., and Lu, W.: ‘Polarization-Engineered Ga-Face GaN-Based Heterostructures for Normally-Off Heterostructure Field-Effect Transistors’, Journal of Electronic Materials, 2013, 42, (1), pp. 10-14

2012 Publications

63.  Santino D. Carnevale, Thomas F. Kent , Patrick J. Phillips , A.T.M. Golam Sarwar, Robert F. Klie,  Siddharth Rajan, Roberto C. Myers, "Graded nanowire ultraviolet LEDs by polarization engineering", Proc. SPIE 8467, Nanoepitaxy: Materials and Devices IV, 84670L

62.  Ramesh, P., Krishnamoorthy, S., Rajan, S., and Washington, G.N.: ‘Fabrication and characterization of a piezoelectric gallium nitride switch for optical MEMS applications’, Smart Materials and Structures, 2012, 21, (9), pp. 094003

61.  Stemmer, S., Chobpattana, V., and Rajan, S.: ‘Frequency dispersion in III-V metal-oxide-semiconductor capacitors’, Applied Physics Letters, 2012, 100, (23), pp. 233510

60. Fang, T., Wang, R., Xing, H., Rajan, S., and Jena, D.: ‘Effect of Optical Phonon Scattering on the Performance of GaN Transistors’, IEEE Electron Device Letters, 2012, 33, (5), pp. 709-711

59. Park, P.S., Nath, D.N., and Rajan, S.: ‘Quantum Capacitance in N-Polar GaN/AlGaN/GaN Heterostructures’, IEEE Electron Device Letters, 2012, 33, (7), pp. 991-993

58. Akyol, F., Nath, D.N., Krishnamoorthy, S., Park, P.S., and Rajan, S.: ‘Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes’, Applied Physics Letters, 2012, 100, (11), pp. 111118

57. Lecce, V.D., Krishnamoorthy, S., Esposto, M., Hung, T.-H., Chini, A., and Rajan, S.: ‘Metal-oxide barrier extraction by Fowler-Nordheim tunneling onset in Al2O3-onGaN MOS diodes’, in Editor (Ed.)^(Eds.): ‘Book Metal-oxide barrier extraction by Fowler-Nordheim tunneling onset in Al2O3-onGaN MOS diodes’ (Institution of Engineering and Technology, 2012, edn.), pp. 347-348

56. Nath, D.N., Park, P.S., Esposto, M., Brown, D., Keller, S., Mishra, U.K., and Rajan, S.: ‘Polarization engineered 1-dimensional electron gas arrays’, Journal of Applied Physics, 2012, 111, (4), pp. 043715

55. Carnevale, S.D., Kent, T.F., Phillips, P.J., Mills, M.J., Rajan, S., and Myers, R.C.: ‘Polarization-Induced pn Diodes in Wide-Band-Gap Nanowires with Ultraviolet Electroluminescence’, Nano Letters, 2012, 12, (2), pp. 915-920

54. Sung Park, P., Nath, D.N., Krishnamoorthy, S., and Rajan, S.: ‘Electron gas dimensionality engineering in AlGaN/GaN high electron mobility transistors using polarization’, Applied Physics Letters, 2012, 100, (6), pp. 063507

2011 Publications

53. Krishnamoorthy, S., Park, P.S., and Rajan, S.: ‘Demonstration of forward inter-band tunneling in GaN by polarization engineering’, Applied Physics Letters, 2011, 99, (23), pp. 233504

52. Moetakef, P., Cain, T.A., Ouellette, D.G., Zhang, J.Y., Klenov, D.O., Janotti, A., Van de Walle, C.G., Rajan, S., Allen, S.J., and Stemmer, S.: ‘Electrostatic carrier doping of GdTiO3/SrTiO3 interfaces’, Applied Physics Letters, 2011, 99, (23), pp. 232116

51. Hung, T.-H., Esposto, M., and Rajan, S.: ‘Interfacial charge effects on electron transport in III-Nitride metal insulator semiconductor transistors’, Applied Physics Letters, 2011, 99, (16), pp. 162104

50. JSon, J., Rajan, S., Stemmer, S., and James Allen, S.: ‘A heterojunction modulation-doped Mott transistor’, Journal of Applied Physics, 2011, 110, (8), pp. 084503

49. Esposto, M., Krishnamoorthy, S., Nath, D.N., Bajaj, S., Hung, T.-H., and Rajan, S.: ‘Electrical properties of atomic layer deposited aluminum oxide on gallium nitride’, Applied Physics Letters, 2011, 99, (13), pp. 133503

48. Gür, E., Zhang, Z., Krishnamoorthy, S., Rajan, S., and Ringel, S.A.: ‘Detailed characterization of deep level defects in InGaN Schottky diodes by optical and thermal deep level spectroscopies’, Applied Physics Letters, 2011, 99, (9), pp. 092109

47. Mishra, R., Restrepo, O.D., Rajan, S., and Windl, W.: ‘First principles calculation of polarization induced interfacial charges in GaN/AlN heterostructures’, Applied Physics Letters, 2011, 98, (23), pp. 232114

46. Akyol, F., Nath, D.N., Gür, E., Park, P.S., and Rajan, S.: ‘N-Polar III–Nitride Green (540 nm) Light Emitting Diode’, Japanese Journal of Applied Physics, 2011, 50, (5), pp. 052101

45. Esposto, M., Chini, A., and Rajan, S.: ‘Analytical Model for Power Switching GaN-Based HEMT Design’, IEEE Transactions on Electron Devices, 2011, 58, (5), pp. 1456-1461

44. Nath, D.N., Gür, E., Ringel, S.A., and Rajan, S.: ‘Growth model for plasma-assisted molecular beam epitaxy of N-polar and Ga-polar InxGa1−xN’, Journal of Vacuum Science & Technology B, 2011, 29, (2), pp. 021206

43. Park, P.S., and Rajan, S.: ‘Simulation of Short-Channel Effects in N- and Ga-Polar AlGaN/GaN HEMTs’, IEEE Transactions on Electron Devices, 2011, 58, (3), pp. 704-708.

2010 Publications

42. Emre Koksal, C., Ekici, E., and Rajan, S.: ‘Design and analysis of systems based on RF receivers with multiple carbon nanotube antennas’, Nano Communication Networks, 2010, 1, (3), pp. 160-172

41.  Krishnamoorthy, S., Nath, D.N., Akyol, F., Park, P.S., Esposto, M., and Rajan, S.: ‘Polarization-engineered GaN/InGaN/GaN tunnel diodes’, Applied Physics Letters, 2010, 97, (20), pp. 203502

40.  Nath, D.N., Keller, S., Hsieh, E., DenBaars, S.P., Mishra, U.K., and Rajan, S.: ‘Lateral confinement of electrons in vicinal N-polar AlGaN/GaN heterostructure’, Applied Physics Letters, 2010, 97, (16), pp. 162106

39.  ang, C.K., Roblin, P., Groote, F.D., Ringel, S.A., Rajan, S., Teyssier, J.P., Poblenz, C., Pei, Y., Speck, J., and Mishra, U.K.: ‘Pulsed-IV Pulsed-RF cold-FET parasitic extraction of biased AIGaN/GaN HEMTs using larger signal network analyzer’, IEEE Transactions on Microwave Theory and Techniques, 2010, 58, (5), pp. 1077-1088

38.  Kolluri, S., Keller, S., Brown, D., Gupta, G., Rajan, S., DenBaars, S.P., and Mishra, U.K.: ‘Influence of AlN interlayer on the anisotropic electron mobility and the device characteristics of N-polar AlGaN/GaN metal-insulator-semiconductor-high electron mobility transistors grown on vicinal substrates’, Journal of Applied Physics, 2010, 108, (7), pp. 074502

37.  Tripathi, N., Jindal, V., Shahedipour-Sandvik, F., Rajan, S., and Vert, A.: ‘Turn-on voltage engineering and enhancement mode operation of AlGaN/GaN high electron mobility transistor using multiple heterointerfaces’, Solid-State Electronics, 2010, 54, (11), pp. 1291-1294

36.  Nath, D.N., Gür, E., Ringel, S.A., and Rajan, S.: ‘Molecular beam epitaxy of N-polar InGaN’, Applied Physics Letters, 2010, 97, (7), pp. 071903

35. P. Ramesh, S. Krishnamoorthy, P.S. Park, S. Rajan, G. Washington, “Distributed intelligence using gallium nitride based active devices,” Proc. of SPIE 7643 (2010).

2009 Publications

34.   Pei, Y., Rajan, S., Higashiwaki, M., Chen, Z., DenBaars, S.P., and Mishra, U.K.: ‘Effect of dielectric thickness on power performance of AIGaN/GaN HEMTs’, IEEE Electron Device Letters, 2009, 30, (4), pp. 313-315

33.   Fujiwara, T., Rajan, S., Keller, S., Higashiwaki, M., Speck, J.S., DenBaars, S.P., and Mishra, U.K.: ‘Enhancement-Modem-plane AlGaN/GaN Heterojunction Field-Effect Transistors’, Applied Physics Express, 2009, 2, (1), pp. 011001

32.   Tamboli, A.C., Schmidt, M.C., Rajan, S., Speck, J.S., Mishra, U.K., DenBaars, S.P., and Hu, E.L.: ‘Smooth Top-Down Photoelectrochemical Etching of m-Plane GaN’, 2009, 156, (1), pp. H47-H51

31.   Brown, D.F., Rajan, S., Keller, S., Hsieh, Y.-H., DenBaars, S.P., and Mishra, U.K.: ‘Electron transport in nitrogen-polar high electron mobility transistors’, physica status solidi c, 2009, 6, (S2), pp. S960-S963

30.   Keller, S., Suh, C.S., Fichtenbaum, N.A., Furukawa, M., Chu, R., Chen, Z., Vijayraghavan, K., Rajan, S., DenBaars, S.P., Speck, J.S., and Mishra, U.K.: ‘Influence of the substrate misorientation on the properties of N-polar InGaN/GaN and AlGaN/GaN heterostructures’, Journal of Applied Physics, 2008, 104, (9), pp. 093510 

2008 Publications

29.  Keller, S., Suh, C.S., Chen, Z., Chu, R., Rajan, S., Fichtenbaum, N.A., Furukawa, M., DenBaars, S.P., Speck, J.S., and Mishra, U.K.: ‘Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metalorganic chemical vapor deposition’, Journal of Applied Physics, 2008, 103, (3), pp. 033708

28.   Raman, A., Dasgupta, S., Rajan, S., Speck, J.S., and Mishra, U.K.: ‘AlGaN Channel High Electron Mobility Transistors: Device Performance and Power-Switching Figure of Merit’, Japanese Journal of Applied Physics, 2008, 47, (5), pp. 3359-3361

27.   Imer, B., Haskell, B., Rajan, S., Keller, S., Mishra, U.K., Nakamura, S., Speck, J.S., and DenBaars, S.P.: ‘Electrical characterization of low defect density nonpolar (11¯20) a-plane GaN grown with sidewall lateral epitaxial overgrowth (SLEO)’, Journal of Materials Research, 2008, 23, (2), pp. 551-555

26.   Chu, R., Poblenz, C., Wong, M.H., Dasgupta, S., Rajan, S., Pei, Y., Recht, F., Shen, L., Speck, J.S., and Mishra, U.K.: ‘Improved Performance of Plasma-Assisted Molecular Beam Epitaxy Grown AlGaN/GaN High Electron Mobility Transistors with Gate-Recess and CF4-Treatment’, Applied Physics Express, 2008, 1, pp. 061101

25.   Keller, S., Suh, C.S., Fichtenbaum, N.A., Furukawa, M., Chu, R., Chen, Z., Vijayraghavan, K., Rajan, S., DenBaars, S.P., Speck, J.S., and Mishra, U.K.: ‘Influence of the substrate misorientation on the properties of N-polar InGaN/GaN and AlGaN/GaN heterostructures’, Journal of Applied Physics, 2008, 104, (9), pp. 093510

24.   Wong, M.H., Pei, Y., Chu, R., Rajan, S., Swenson, B.L., Brown, D.F., Keller, S., DenBaars, S.P., Speck, J.S., and Mishra, U.K.: ‘N-Face Metal–Insulator–Semiconductor High-Electron-Mobility Transistors With AlN Back-Barrier’, IEEE Electron Device Letters, 2008, 29, (10), pp. 1101-1104

23.   Brown, D.F., Rajan, S., Keller, S., Hsieh, Y.-H., DenBaars, S.P., and Mishra, U.K.: ‘Electron mobility in N-polar GaN/AlGaN/GaN heterostructuress’, Applied Physics Letters, 2008, 93, (4), pp. 042104

22.   Nidhi, Rajan, S., Keller, S., Wu, F., DenBaars, S.P., Speck, J.S., and Mishra, U.K.: ‘Study of interface barrier of SiNx/GaN interface for nitrogen-polar GaN based high electron mobility transistors’, Journal of Applied Physics, 2008, 103, (12), pp. 124508

21.   Vert, A.V., and Rajan, S.: ‘Properties of oxide deposited on c-plane AlGaN/GaN heterostructure’, in Editor (Ed.)^(Eds.): ‘Book Properties of oxide deposited on c-plane AlGaN/GaN heterostructure’ (Institution of Engineering and Technology, 2008, edn.), pp. 773-774

20.   Rajan, S., Mishra, U.K., and Palacios, T.S.: ‘AlGaN/GaN HEMTs: RECENT DEVELOPMENTS AND FUTURE DIRECTIONS’: ‘Frontiers in Electronics’ (WORLD SCIENTIFIC, 2009), pp. 155-164

19.   Imer, B., Schmidt, M., Haskell, B., Rajan, S., Zhong, B., Kim, K., Wu, F., Mates, T., Keller, S., Mishra, U.K., Nakamura, S., Speck, J.S., and DenBaars, S.P.: ‘Improved quality nonpolar a -plane GaN/AlGaN UV LEDs grown with sidewall lateral epitaxial overgrowth (SLEO)’, physica status solidi (a), 2008, 205, (7), pp. 1705-1712

2007 Publications

18. Rajan, S., Chini, A., Wong, M.H., Speck, J.S., and Mishra, U.K.: ‘N-polar GaN∕AlGaN∕GaN high electron mobility transistors’, Journal of Applied Physics, 2007, 102, (4), pp. 044501

17.   Wong, M.H., Rajan, S., Chu, R.M., Palacios, T., Suh, C.S., McCarthy, L.S., Keller, S., Speck, J.S., and Mishra, U.K.: ‘N-face high electron mobility transistors with a GaN-spacer’, physica status solidi (a), 2007, 204, (6), pp. 2049-2053 

2006 Publications

16.   Rajan, S., DenBaars, S.P., Mishra, U.K., Xing, H., and Jena, D.: ‘Electron mobility in graded AlGaN alloys’, Applied Physics Letters, 2006, 88, (4), pp. 042103

15.   Recht, F., McCarthy, L., Rajan, S., Chakraborty, A., Poblenz, C., Corrion, A., Speck, J.S., and Mishra, U.K.: ‘Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation annealing temperature’, IEEE Electron Device Letters, 2006, 27, (4), pp. 205-207

14.   Fehlberg, T.B., Umana-Membreno, G.A., Nener, B.D., Parish, G., Gallinat, C.S., Koblmüller, G., Rajan, S., Bernardis, S., and Speck, J.S.: ‘Characterisation of Multiple Carrier Transport in Indium Nitride Grown by Molecular Beam Epitaxy’, Japanese Journal of Applied Physics, 2006, 45, (No. 41), pp. L1090-L1092

13.   Simon, J., Wang, A., Xing, H., Rajan, S., and Jena, D.: ‘Carrier transport and confinement in polarization-induced three-dimensional electron slabs: Importance of alloy scattering in AlGaN’, Applied Physics Letters, 2006, 88, (4), pp. 042109

12.   Simon, J., Wang, K., Xing, H., Jena, D., and Rajan, S.: ‘Polarization-Induced 3-Dimensional Electron Slabs in Graded AlGaN Layers’, MRS Proceedings, 2005, 892, pp. 0892-FF0817-0804

11.   A. Corrion, C. Poblenz, P. Waltereit, T. Palacios, S. Rajan, U. K. Mishra, J. S. Speck, "Review of Recent Developments in Growth of AlGaN/GaN High-Electron Mobility Transistors on 4H-SiC by Plasma-Assisted Molecular Beam Epitaxy," IEICE Transactions, E89-C (7), pp. 906-912.  

2005 Publications

10.   Rajan, S., Wong, M., Fu, Y., Wu, F., Speck, J.S., and Mishra, U.K.: ‘Growth and Electrical Characterization of N-face AlGaN/GaN Heterostructures’, Japanese Journal of Applied Physics, 2005, 44, (No. 49), pp. L1478-L1480

9.     Haijiang, Y., McCarthy, L., Rajan, S., Keller, S., Denbaars, S., Speck, J., and Mishra, U.: ‘Ion implanted AlGaN-GaN HEMTs with nonalloyed Ohmic contacts’, IEEE Electron Device Letters, 2005, 26, (5), pp. 283-285

8.     Poblenz, C., Waltereit, P., Rajan, S., Mishra, U.K., Speck, J.S., Chin, P., Smorchkova, I., and Heying, B.: ‘Effect of AlN nucleation layer growth conditions on buffer leakage in AlGaN∕GaN high electron mobility transistors grown by molecular beam epitaxy (MBE)’, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2005, 23, (4), pp. 1562-1567

7.     Palacios, T., Rajan, S., Chakraborty, A., Heikman, S., Keller, S., DenBaars, S.P., and Mishra, U.K.: ‘Influence of the dynamic access resistance in the g/sub m/ and f/sub T/ linearity of AlGaN/GaN HEMTs’, IEEE Transactions on Electron Devices, 2005, 52, (10), pp. 2117-2123

6.     Palacios, T., Chakraborty, A., Rajan, S., Poblenz, C., Keller, S., DenBaars, S.P., Speck, J.S., and Mishra, U.K.: ‘High-power AlGaN/GaN HEMTs for Ka-band applications’, IEEE Electron Device Letters, 2005, 26, (11), pp. 781-783

2004 Publications

5.     Rajan, S., Chakraborty, A., Mishra, U.K., Poblenz, C., Waltereit, P., and Speck, J.S.: ‘MBE-Grown AIGaN/GaN HEMTs on SiC’: ‘High Performance Devices’ (WORLD SCIENTIFIC, 2005), pp. 108-113

4.     Rajan, S., Xing, H., DenBaars, S., Mishra, U.K., and Jena, D.: ‘AlGaN/GaN polarization-doped field-effect transistor for microwave power applications’, Applied Physics Letters, 2004, 84, (9), pp. 1591-1593

3.     Rajan, S., Waltereit, P., Poblenz, C., Heikman, S.J., Green, D.S., Speck, J.S., and Mishra, U.K.: ‘Power performance of AlGaN-GaN HEMTs grown on SiC by plasma-assisted MBE’, IEEE Electron Device Letters, 2004, 25, (5), pp. 247-249

2.     Poblenz, C., Waltereit, P., Rajan, S., Heikman, S., Mishra, U.K., and Speck, J.S.: ‘Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors’, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2004, 22, (3), pp. 1145-1149

1.     Waltereit, P., Poblenz, C., Rajan, S., Wu, F., Mishra, U.K., and Speck, J.S.: ‘Structural Properties of GaN Buffer Layers on 4H-SiC(0001) Grown by Plasma-Assisted Molecular Beam Epitaxy for High Electron Mobility Transistors’, Japanese Journal of Applied Physics, 2004, 43, (No. 12A), pp. L1520-L1523