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List of Publication (Year Wise)


2017 Publications

113. S Krishnamoorthy, Z Xia, S Bajaj, M Brenner, S Rajan, "Delta-doped β-gallium oxide field-effect transistor", Applied Physics Express 10 (5), 051102 (2017). (Featured as Spotlight article)

112. Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol, Sanyam Bajaj , Andrew A. Allerman, Michael William Moseley, Andrew M. Armstrong, and Siddharth Rajan, “Tunnel-injected sub-260 nm ultraviolet light emitting diodes”, Applied Physics Letters, 110, 201102 (2017). (Featured in Editor’s Picks)

111. Choong Hee Lee, Sriram Krishnamoorthy, Dante J. O’Hara, Mark R. Brenner, Jared M. Johnson, John S. Jamison, Roberto C. Myers, Roland K. Kawakami, Jinwoo Hwang, and Siddharth Rajan, "Molecular beam epitaxy of 2D-layered gallium selenide on GaN substrates", Journal of Applied Physics 121, 094302 (2017)

110. Choong Hee Lee, Edwin W. Lee II, William McCulloch, Zane Jamal-Eddine, Sriram Krishnamoorthy, Michael J. Newburger, Roland K. Kawakami, Yiying Wu, and Siddharth Rajan. "A self-limiting layer-by-layer etching technique for 2H-MoS2." Applied Physics Express 10, 035201 (2017).

2016 Publications

109. Shubhendu Bhardwaj, Berardi Sensale-Rodriguez, Huili Grace Xing, Siddharth Rajan, John L Volakis, "Resonant tunneling assisted propagation and amplification of plasmons in high electron mobility transistors", J. Appl. Phys. 119, 013102 (2016).

108. Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol, Andrew A Allerman, Michael W Moseley, Andrew M Armstrong, Siddharth Rajan, "Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes",  Appl. Phys. Lett. 109, 191105 (2016)

107. Fatih Akyol, Sriram Krishnamoorthy, Yuewei Zhang, Jared Johnson, Jinwoo Hwang and Siddharth Rajan. "Low resistance GaN tunnel homojunctions with 150 kA/cm2 current and repetable negative differential resistance." Applied Physics Letters 108, 131103 (2016) 

106. Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol, Andrew A Allerman, Michael W Moseley, Andrew M Armstrong, Siddharth Rajan, "Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions", Appl. Phys. Lett. 109, 121102 (2016).

105. Yuewei Zhang, Andrew A Allerman, Sriram Krishnamoorthy, Fatih Akyol, Michael W Moseley, Andrew M Armstrong, Siddharth Rajan, "Enhanced light extraction in tunnel junction-enabled top emitting UV LEDs", Applied Physics Express 9 (5), 052102 (2016).

104. Sanyam Bajaj, Fatih Akyol, Sriram Krishnamoorthy, Yuewei Zhang, and Siddharth Rajan. "AlGaN channel field effect transistors with graded heterostructure ohmic contacts." Applied Physics Letters 109(13), 133508 (2016).

103. Jacob B. Khurgin, Sanyam Bajaj and Siddharth Rajan. "Amplified spontaneous emission of phonons as a likely mechanism for density-dependent velocity saturation in GaN transistors." Applied Physics Express 9.9, 094101 (2016).

102. Sriram Krishnamoorthy , Edwin W. Lee II, Choong Hee Lee, Yuewei Zhang, William D. McCulloch, Jared M. Johnson, Jinwoo Hwang, Yiying Wu, Siddharth Rajan "High Current Density 2D/3D Esaki Tunnel Diodes", Applied Physics Letter, 2016 (Accepted).

101. S Bhardwaj, B Sensale-Rodriguez, HG Xing, S Rajan, JL Volakis,"Resonant tunneling assisted propagation and amplification of plasmons in high electron mobility transistors", Journal of Applied Physics 119 (1), 013102

2015 Publications

100. JB Khurgin, S Bajaj, S Rajan, "Elastic scattering by hot electrons and apparent lifetime of longitudinal optical phonons in gallium nitride", Applied Physics Letters 107 (26), 262101

99. L Kornblum, EN Jin, O Shoron, M Boucherit, S Rajan, CH Ahn, FJ Walker, "Electronic transport of titanate heterostructures and their potential as channels on (001) Si", Journal of Applied Physics 118 (10), 105301,2015

98. Y. Zhang, S. Krishnamoorthy, J. M. Johnson, F. Akyol, A. Allerman, M. W. Moseley, A. Armstrong, J. Hwang and S. Rajan, ''Interband tunneling for hole injection in III-nitride ultraviolet emitters", Appl. Phys. Lett. 106, 141103 (2015).

97. Zhichao Yang, Digbijoy Nath, Yuewei Zhang, Jacob Khurgin, Siddharth Rajan, "Common Emitter Current and Voltage Gain in III-Nitride Tunneling Hot Electron Transistors", Electron Device Letters, IEEE (Volume:36,Issue:5), 2015

96. S Arulkumaran, GI Ng, CM Manoj Kumar, K Ranjan, KL Teo, OF Shoron, S Rajan, S Bin Dolmanan, S Tripathy, "Electron velocity of 6×107 cm/s at 300 K in stress engineered InAlN/GaN nano-channel high-electron-mobility transistors", Applied Physics Letters 106 (5), 053502, 2015

95. F Akyol, S Krishnamoorthy, Y Zhang, S Rajan, "GaN-based three-junction cascaded light-emitting diode with low-resistance InGaN tunnel junctions",Applied Physics Express 8 (8), 082103, 2015

94. Pil Sung Park, Sriram Krishnamoorthy, Sanyam Bajaj, Digbijoy Nath, and Siddharth Rajan, " Recess-Free Non-alloyed Ohmic Contacts on Graded AlGaN Heterojunction FETs ", IEEE Electron Device Letters, VOL. 36, NO. 3, pp 226- 228 (2015)

93. Sanyam Bajaj , Omor Faruk Shoron , Pil Sung Park , Sriram Krishnamoorthy , Fatih Akyol , Ting-Hsiang Hung , Shahed Reza , Eduardo M. Chumbes , Jacob B. Khurgin , Siddharth Rajan, " Density-Dependent Electron Transport and Precise Modeling of GaN HEMTs ", Applied Physics Letters, 107, 153504 (2015)

92. Choong Hee Lee, William McCulloch, Edwin W. Lee II, Lu Ma, Sriram Krishnamoorthy, Jinwoo Hwang, Yiying Wu, and Siddharth Rajan, "Transferred large area single crystal MoS2 field effect transistors", Applied Physics Letters 107, 193503 (2015).

91. Edwin W. Lee II, Choong Hee Lee, Pran K. Paul, Lu Ma, William D. McCulloch, Sriram Krishnamoorthy, Yiying Wu, Aaron R. Arehart, Siddharth Rajan, "Layer-transferred MoS2/GaN PN Diodes", Applied Physics Letters 107, 103505 (2015).

90. Zhichao Yang, Yuewei Zhang, Digbijoy N. Nath, Jacob B. Khurgin and Siddharth Rajan, "Current gain in sub-10 nm base GaN tunneling hot electron transistors with AlN emitter barrier", Applied Physics Letters 106, 032101 (2015).

2014 Publications

89. Edwin W. Lee II, Lu Ma, Digbijoy N. Nath, Choong Hee Lee, Aaron R. Arehart, Yiying Wu, Siddharth Rajan, "Growth and electrical characterization of two-dimensional layered MoS2/SiC heterojunctions", Applied Physics Letters 105, 203504 (2014).

88. Zhichao Yang, Digbijoy Nath and Siddharth Rajan, "Negative differential resistance in GaN tunneling hot electron transistors", Applied Physics Letters 105, 202111 (2014).

87. S. Bajaj, T.-H. Hung, F. Akyol, D. N. Nath and S. Rajan. "Modeling of high composition AlGaN channel high electron mobility transistors with large threshold voltage." Applied Physics Letters 105(26), 263503 (2014).

86. Sriram Krishnamoorthy, Fatih Akyol, and Siddharth Rajan, " InGaN/GaN Tunnel Junctions For Hole Injection in GaN Light Emitting Diodes", Applied Physics Letters 105, 141104 (2014) .

85. P Ramesh, S Krishnamoorthy, S Rajan, GN Washington, "Energy band engineering for photoelectrochemical etching of GaN/InGaN heterostructuresApplied Physics Letters 104 (24), 243503

84. Lu Ma, Digbijoy N Nath, Edwin W Lee II, Choong Hee Lee, Mingzhe Yu, Aaron Arehart, Siddharth Rajan, Yiying Wu, "Epitaxial growth of large area single-crystalline few-layer MoS2 with high space charge mobility of 192 cm2 V− 1 s− 1Applied Physics Letters 105 (7), 072105

83. M Boucherit, O Shoron, CA Jackson, TA Cain, MLC Buffon, C Polchinski, S Stemmer, S Rajan, "Modulation of over 1014 cm− 2 electrons in SrTiO3/GdTiO3 heterostructuresApplied Physics Letters 104 (18), 182904

82. TH Hung, K Sasaki, A Kuramata, DN Nath, PS Park, C Polchinski, S Rajan "Energy band line-up of atomic layer deposited Al2O3 on β-Ga2O3Applied Physics Letters 104 (16), 162106

81. Krishnamoorthy, Sriram, Fatih Akyol, and Siddharth Rajan. "III-nitride tunnel junctions for efficient solid state lighting." SPIE OPTO. International Society for Optics and Photonics, 2014.

80. Ting-Hsiang Hung, Pil-Sung Park, Sriram Krishnamoorthy, Digbijoy Nath, Siddharth Rajan, “Interface Charge Engineering for Enhancement-Mode GaN MISHEMTs”, IEEE Electron Device Letters, Vol. 35, No. 3, 99. 312-314, March 2014.

79. M Laskar, DN Nath, L Ma, E Lee, CH Lee, T Kent, Z Yang, R Mishra, MA Roldan, Juan-Carlos Idrobo, Sokrates T. Pantelides, Stephen J. Pennycook, R. Myers, Y. Wu, S. Rajan, “p-type doping in CVD grown MoS2 using Nb”, Appl. Phys. Lett.  104 092104 (2014).

2013 Publications

78. Stemmer, Susanne, et al. "(Invited) Interface Trap Densities and Admittance Characteristics of III-V MOS Capacitors." ECS Transactions 50.4 (2013): 141-144.

77. Y Wang, X Luo, N Zhang, MR Laskar, L Ma, Y Wu, S Rajan, W Lu, “Low frequency noise in chemical vapor deposited MoS2”, arXiv preprint, arXiv:1310.6484.

76. J Yang, S Cui, TP Ma, TH Hung, D Nath, S Krishnamoorthy, S Rajan, “A study of electrically active traps in AlGaN/GaN high electron mobility transistor”, Applied Physics Letters 103, 173520 (2013).

75. Baishakhi Mazumder, Michele Esposto, Ting H. Hung, Tom Mates, Siddharth Rajan, and James S. Speck, "Characterization of a dielectric/GaN system using atom probe tomography", Applied  Physics Letters 103, 151601 (2013).

74. Fatih Akyol, Sriram Krishnamoorthy, and Siddharth Rajan, "Tunneling-based carrier regeneration in cascaded GaN light emitting diodes to overcome efficiency droop",Applied Physics Letters, 103, 081107 (2013).

73. M. Boucherit, O. F. Shoron, T. A. Cain, C.A. Jackson, S. Stemmer, and S. Rajan, "Extreme charge density SrTiO3/GdTiO3 heterostructure field effect transistors", Applied Physics Letters, 102, 242909(2013).

72. Ming Su, Chingchi Chen, and Siddharth Rajan, "Prospects for application of GaN power devices in hybrid electric vehicle", Semiconductor Science and Technology, 28. 074012 (2013).

71. Pil Sung Park, Kongara M. Reddy, Digbijoy N. Nath, Zhichao Yang, Nitin P. Padture, Siddharth Rajan, "Ohmic Contact FormationBetween Metal and AlGaN/GaN Heterostructure via Graphene Insertion", Applied Physics Letters, 102, 153501(2013).

70.  D. N. Nath, Z. C. Yang, C.-Y. Lee, P. S. Park, Y.-R. Wu and S. Rajan, "Unipolar Vertical Transport in GaN/AlGaN/GaN Heterostructures", Applied Physics Letters, 103, 022102 (2013).

69. Masihhur R. Laskar, Lu Ma, ShanthaKumar K, Pil Sung Park, Sriram Krishnamoorthy, Digbijoy N. Nath, Wu Lu, Yiying Wu, Siddharth Rajan, "Large Area Single Crystal (0001) Oriented MoS2 Thin Films", Applied Physics Letters, 102, 252108 (2013).

68. Sriram Krishnamoorthy , Thomas Kent, Jing Yang, Pil Sung Park, Roberto Myers, and Siddharth Rajan, "GdN Nanoisland-Based GaN Tunnel junctions", Nano Letters. 13 (6) ,pp 2570 (2013).

67. Sriram Krishnamoorthy , Fatih Akyol, Pil Sung Park, and Siddharth Rajan, "Low Resistance GaN/InGaN/GaN tunnel junctions ", Applied Physics Letters  102, 113503 (2013).

66. Ting-Hsiang Hung, Sriram Krishnamoorthy, Michele Esposto, Digbijoy Neelim Nath, Pil Sung Park, and Siddharth Rajan," Interface charge engineering at atomic layer deposited dielectric/III-nitride interfaces",  Appl. Phys. Lett. 102, 072105 (2013)

65. A.R. Arehart, A. Sasikumar, S. Rajan, G.D. Via, B. Poling, B. Winningham, E.R. Heller, D. Brown, Y. Pei, F. Recht, U.K. Mishra, S.A. Ringel," Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors", Solid-State Electronics, Volume 80, Pages 19–22 (2013).

64.  Hyeongnam Kim, Digbijoy Nath, Siddharth Rajan, Wu Lu, " Polarization-Engineered Ga-Face GaN-Based Heterostructures for Normally-Off Heterostructure Field-Effect Transistors", Journal of Electronic Materials, 42, Issue 1, pp 10-14 (2013).

2012 Publications

63.  Santino D. Carnevale, Thomas F. Kent , Patrick J. Phillips , A.T.M. Golam Sarwar, Robert F. Klie,  Siddharth Rajan, Roberto C. Myers, "Graded nanowire ultraviolet LEDs by polarization engineering", Proc. SPIE 8467, Nanoepitaxy: Materials and Devices IV, 84670L

62.  Prashanth Ramesh, Sriram Krishnamoorthy, Siddharth Rajan and Gregory N Washington, "Fabrication and characterization of a piezoelectric gallium nitride switch for optical MEMS applications", Smart Mater. Struct. 21 094003.

61.  Susanne Stemmer, Varistha Chobpattana, and Siddharth Rajan , " Frequency dispersion in III-V metal-oxide-semiconductor capacitors", Applied Physics Letters, 100, 233510 (2012).

60. Tian Fang, Ronghua Wang, Huili Xing, Siddharth Rajan, and Debdeep Jena, "Effect of Optical Phonon Scattering on the Performance of GaN Transistors", IEEE Electron Device Letters  Vol. 33, No. 5, May 2012

59. P S Park, D N Nath,and  S Rajan "Quantum Capacitance in N-polar GaN/AlGaN/GaN Heterostructures", IEEE Electron Device Letters  Vol.33, Issue 7, 991-993 (2012).

58. F. Akyol, D N Nath, S Krishnamoorthy,P S Park, and S. Rajan, "Suppression of Electron Overflow and Efficiency Droop in N polar GaN Green LEDs", Applied Physics Letters, 100, 111118 (2012).

57. V. Di. Lecce, S. Krishnamoorthy, M. Esposto, T.H.Hung, A. Chini, and S. Rajan, "Metal-oxide barrier extraction by Fowler Nordheim tunneling onset in Al2 O3- on- GaN MOS diodes", Electronics Letters, 48, 347 (2012).

56. Digbijoy N. Nath, Pil Sung Park, Michele Esposto, David Brown, Stacia Keller, Umesh K. Mishra, and Siddharth Rajan," Polarization engineered 1-dimensional electron gas arrays" Journal of Applied Physics, , 12 (2), pp 915–920 (2012).

55. S D Carnevale, T F Kent, P J Phillips, M J Mills, S Rajan, and R C Myers," Polarization-Induced pn Diodes in Wide-Band-Gap Nanowires with Ultraviolet Electroluminescence" Nano Letters,12 (2), pp 915–920 (2012).

54. P S Park, D N Nath, S Krishnamoorthy, and S Rajan, " Electron gas dimensionality engineering in AlGaN/GaN high electron mobility transistors using polarization", Applied Physics Letters, 100, 063507 (2012).

2011 Publications

53. S. Krishnamoorthy, P.S. Park. and S. Rajan, " Demonstration of forward inter-band tunneling in GaN by polarization engineering", Applied Physics Letters, 99, 233504 (2011)

52. P. Moetakef, T.A. Cain, D.G. Ouellette, J. Y. Zhang, D. O. Klenov, A. Janotti, C.G. Van de Walle, S. Rajan, S. J. Allen, and S. Stemmer, "Electrostatic carrier doping of GdTiO3/SrTiO3 interfaces", Applied Physics Letters, 99, 232116 (2011).

51. T. Hung, M. Esposto, and S. Rajan, "Interfacial charge effects on electron transport in III-Nitride metal insulator semiconductor transistors", Applied Physics Letters, 162104 (2011).

50. J. Son ,S. Rajan, S. Stemmer, and S. James Allen ," A heterojunction modulation-doped Mott transistor", Journal of Applied Physics, 110, 084503 (2011).

49. M. Esposto,S. Krishnamoorthy, D. Nath, S. Bajaj, T. Hung, and S. Rajan," Electrical properties of atomic layer deposited aluminum oxide on gallium nitride", Applied Physics Letters, 99, 133503 (2011).

48. E. Gur, Z. Zhang, S. Krishnamoorthy, S. Rajan, and S. A. Ringel, " Detailed characterization of deep level defects in InGaN schottky diodes by optical and thermal deep level spectroscopies", Applied Physics Letters, 99, 092109 (2011).

47. R. Mishra, O.D. Restrepo, S. Rajan, and W. Windl, " First principles calculation of polarization induced interfacial charges in GaN/AlN heterostructures", Applied Physics Letters, 98, 232114 (2011).

46. F. Akyol, D. N. Nath, E. Gur and S. Rajan, "N-Polar III- Nitride green(540 nm) light emitting diode", Japanese Journal of Applied Physics 50 , 052101 (2011).

45. M. Esposto, A. Chini, and S. Rajan, "Analytical Model for Power Switching GaN- based HEMTs", IEEE Transactions on Electron Devices, Vol. 58, No.5, 1456 (2011)

44. D. N. Nath, E. Gur, S. A. Ringel, S. Rajan, "Growth model for plasma- assisted molecular beam epitaxy of N-polar and Ga-polar InGaN", Journal of Vacuum Science and Technology. B 29, 021206 (2011)

43. P. S. Park and S. Rajan, "Simulation of Short-Channel Effects in N- and Ga-polar AlGaN/GaN HEMTs", IEEE Transactions on Electron Devices, 58, 3, 704 (2011).

2010 Publications

42. C. Emre Koksal, E. Ekici and S. Rajan, "Design and analysis of systems based on RF receivers with multiple carbon nanotube antennas", Nano Communication Networks, 1(3), 160-172(2010).

41.  S. Krishnamoorthy, D. Nath, F.Akyol, P. S. Park, S. Rajan, " Polarization-engineered GaN/InGaN/GaN tunnel diodes", Applied Physics Letters, 97, 203502 (2010).

40.  D. Nath, S. Keller, E. Hsieh, S.P. DenBaars, U. K. Mishra, and Siddharth Rajan, " Lateral confinement of electrons in vicinal N-polar AlGaN/GaN heterostructure", Applied Physics Letters, 97, 162106 (2010).

39.  C. K. Yang, P. Roblin, J. D. Groote, S. A. Ringel, S. Rajan, J. P. Teyssier, C. Poblenz, Y. Pei, J, Speck, U. K. Mishra, "Pulsed-IV Pulsed-RF Cold-FET Parasitic Extraction of Biased AlGaN/GaN HEMTs Using Large Signal Network Analyzer", IEEE Trans. Microwave Theory and Techniques, 58 (5), pp. 1077-1088, May 2010.

38.  S. Kolluri, S. Keller, D. Brown, G. Gupta, U.K. Mishra, S. P. DenBaars, and S. Rajan, “Influence of AlN Interlayer on the Anisotropic Electron Mobility and the Device Characteristics of N-polar AlGaN/GaN MIS-HEMTs Grown on Vicinal Substrates”, Journal of Applied Physics, Journal of Applied Physics, 108, 074502 (2010).

37.  N. Tripathi, V. Jindal, F. Shahedipour-Sandvik, S. Rajan, and A. Vert,, “Turn-on voltage engineering and enhancement mode operation of AlGaN/GaN high electron mobility transistor using multiple heterointerfaces,” Solid State Electronics 54 (11), p. 1291 (2010).

36.  D. Nath, E. Gur, S. A. Ringel, S. Rajan, “Molecular Beam Epitaxy of N-polar InGaN,” Applied Physics Letters 97, 071903 (2010).

35. P. Ramesh, S. Krishnamoorthy, P.S. Park, S. Rajan, G. Washington, “Distributed intelligence using gallium nitride based active devices,” Proc. of SPIE 7643 (2010).

2009 Publications

34.   Y. Pei, S. Rajan, M. Higashiwaki, Z. Chen, S. P. DenBaars, U. K. Mishra, "Effect of Dielectric Thickness on Power Performance of AlGaN/GaN HEMTs," IEEE Elec. Dev. Lett. 30 (4), Page(s): 313-315.

33.   T. Fujiwara, S. Rajan, S. Keller, M. Higashiwaki, J. S. Speck, S. P. DenBaars, U. K. Mishra, “Enhancement-Mode m-Plane Heterojunction AlGaN/GaN Transistor," Applied Physics Express, Volume 2, Issue 1, pp. 011001.

32.   A. C. Tamboli, M. C. Schmidt, S. Rajan, J. S. Speck, U. K. Mishra, S. P. DenBaars, E. L. Hu, "Smooth Top-Down Photoelectrochemical Etching of m-Plane GaN," J. Electrochem. Soc., Volume 156, Issue 1, pp. H47-H51.

31.   Brown, D. F., Rajan, S., Keller, S., Hsieh, Y.-H., DenBaars, S. P. and Mishra, U. K. (2009), Electron transport in nitrogen-polar high electron mobility transistors. physica status solidi (c), 6: S960–S963.

30.   S. Keller, C. S. Suh, N. A. Fichtenbaum, M. Furukawa, R. Chu, Z. Chen, K. Vijayraghavan, S. Rajan, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Influence of the substrate misorientation on the properties of N-polar InGaN/GaN and AlGaN/GaN heterostructures," J. Appl. Phys. 104, 093510. 

2008 Publications

29.  S. Keller, C. S. Suh, Z. Cheng, R. Chu, S. Rajan, N. Fichtenbaum, M. Furukawa, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metal-organic chemical vapor deposition," Journal of Applied Physics 103, 033708.

28.   A. Raman, S. Dasgupta, D. Brown, S. Rajan, J. S. Speck and U. K. Mishra, "AlGaN Channel High Electron Mobility Transistors: Device Performance and Power-Switching Figure of Merit," Jpn. J. Appl. Phys. 47 pp. 3359-3361.

27.   B. Imer, B. Haskell, S. Rajan, S. Keller, U. K. Mishra, S. Nakamura, J. S. Speck, S. P. DenBaars, "Electrical characterization of low defect density nonpolar (110) a-plane GaN grown with sidewall lateral epitaxial overgrowth (SLEO)," Journal of Materials Research, vol. 23, issue 2, pp. 551-555.

26.   R. M. Chu, C. Poblenz, M. H. Wong, S. Dasgupta, S. Rajan, Y. Pei, F. Recht, L. K. Shen, L. K. Shen, J. S. Speck, and U. K. Mishra, "Improved performance of plasma-assisted molecular beam epitaxy grown AlGaN/GaN high electron mobility transistors with gate-recess and CF4 treatment," Applied Physics Express, vol. 1, art no. 061101.

25.   S. Keller, C. S. Suh, N. A. Fichtenbaum, M. Furukawa, R. M. Chu, S. Rajan, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Influence of the substrate misorientation on the properties of N-polar InGaN/GaN and AlGaN/GaN heterostructures," Journal of Applied Physics, vol. 104 (9), art no. 093510.

24.   M. H. Wong, Y. Pei, R. M. Chu, S. Rajan, B. Swenson, D. F. Brown, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "N-Face metal-insulator-semiconductor high electron mobility transistors with AlN back-barrier," IEEE Electron Device Letters, vol. 29 (10), pp. 1101-1104.

23.   D. F. Brown, S. Rajan, S. Keller, S. P. DenBaars, U. K. Mishra, "Electron Mobility in N-polar GaN/AlGaN/GaN Heterostructures," Appl. Phys. Lett. 93, 042104.

22.   Nidhi, S. Rajan, S. Keller, F. Wu, S. P. DenBaars, J. S. Speck. and U. K. Mishra, "Study of Interface barrier of SiNx/GaN interface for Nitrogen-polar GaN based High Electron Mobility Transistors,"J. Appl. Phys. 103, 124508.

21.   A.V. Vert, S. Rajan, "Properties of oxide deposited on c-plane AlGaN/GaN heterostructure," Electronics Letters , vol.44, no.12, pp.773-774.

20.   S. Rajan, U. K. Mishra, T. Palacios, "AlGaN/GaN HEMTs: Recent Developments and Future Directions," International Journal of High Speed Electronics and Systems, Volume: 18, Issue: 4(2008) pp. 913-922

19.   Imer, B., Schmidt, M., Haskell, B., Rajan, S., Zhong, B., Kim, K., Wu, F., Mates, T., Keller, S., Mishra, U. K., Nakamura, S., Speck, J. S. and DenBaars, S. P. (2008), Improved quality nonpolar a -plane GaN/AlGaN UV LEDs grown with sidewall lateral epitaxial overgrowth (SLEO). physica status solidi (a), 205: 1705–1712. 

2007 Publications

18. S. Rajan, A. Chini, M. Wong , J. S. Speck, U. K. Mishra, "N-polar GaN/AlGaN/GaN High Electron Mobility Transistors," Journal of Applied Physics 102, 044501.

17.   M. H. Wong, S. Rajan, R. M. Chu, T. Palacios, C. S. Suh, L. S. McCarthy, S. Keller, J. S. Speck, U. K. Mishra, "N-face High Electron Mobility Transistors with a GaN-spacer," Phys. Stat. Sol. (a) 204, 2049.  

2006 Publications

16.   S. Rajan, H. Xing, D. Jena, S. P. DenBaars, U. K. Mishra, "Electron Mobility in Graded AlGaN Alloys," Applied Physics Letters 88, 042109.

15.   F Recht, L McCarthy, S Rajan, A Chakraborty, C Poblenz, A Corrion, J S Speck, U K Mishra, " Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation annealing temperature", IEEE Electron Device Letters, 27,4, 205-207 (2006).

14.   T. B. Fehlberg, G. A. Umana-Membreno, B. D. Nener, G. Parish, C. S. Gallinat, G. Koblmueller, S. Rajan, S. Bernardis, J. S. Speck, "Characterisation of multiple carrier transport in indium nitride, grown by molecular beam epitaxy," Japanese Journal of Applied Physics Part 2-Letters & Express Letters 45 (37-41): L1090-L1092.

13.   J. Simon, A. Wang, S. Rajan, H. Xing and D. Jena, "Carrier transport and confinement in polarization-induced 3D electron slabs: Importance of alloy scattering in AlGaN," Applied Physics Letters, Appl. Phys. Lett. 88, 042109.

12.   J. Simon, K.A. Wang, H. Xing, D. Jena, and S. Rajan, “Polarization-induced 3-dimensional slabs in graded AlGaN layers,” Mater. Res. Soc. Symp. Proc. Vol. 892 (2006).

11.   A. Corrion, C. Poblenz, P. Waltereit, T. Palacios, S. Rajan, U. K. Mishra, J. S. Speck, "Review of Recent Developments in Growth of AlGaN/GaN High-Electron Mobility Transistors on 4H-SiC by Plasma-Assisted Molecular Beam Epitaxy," IEICE Transactions, E89-C (7), pp. 906-912.  

2005 Publications

10.   S. Rajan, M. Wong, Y. Fu, F. Wu, J. S. Speck, U. K. Mishra, "Growth and Electrical Characterization of N-face AlGaN/GaN Heterostructures," Japanese Journal of Applied Physics, Vol. 44, No. 49, , pp. L1478-L1480.

9.     H. Yu, L. McCarthy, S. Rajan, S. Keller, S. DenBaars, J. S. Speck, U. K. Mishra, "Ion Implanted GaN/AlGaN HEMTs with non-alloyed Ohmic Contacts," IEEE Electron Device Letters, 26 (5), pp. 283-285.

8.     C. Poblenz, P. Waltereit, S. Rajan, U. K. Mishra, J. S. Speck, P. Chin, I. Smorchkova, B. Heying, "Effect of AlN nucleation layer growth conditions on buffer leakage in AlGaN/GaN high electron mobility transistors grown by molecular beam epitaxy (MBE)," J. Vac. Sci. Technol. B 23, 1562.

7.     T. Palacios , S. Rajan, A. Chakraborty, S. Heikman, S. Keller, S. P. DenBaars, U. K. Mishra, "Influence of the Dynamic Access Resistance in the gm and fT Linearity of AlGaN/GaN HEMTs," IEEE Trans. Elec. Dev., 52 (10), pp. 2117-2123.

6.     T. Palacios, A. Chakraborty, S. Rajan, C. Poblenz, S. Keller, S. P. DenBaars, J. S. Speck, U. K. Mishra, "High-Power AlGaN/GaN HEMTs for Ka-Band Applications," IEEE Elec. Dev. Lett. 26 (11), pp. 781-783.  

2004 Publications

5.     S. Rajan, C. Poblenz, P. Waltereir, A. Chakraborty, J. S. Speck, U. K. Mishra, "MBE-Grown AlGaN/GaN HEMTs on SiC," International Journal of High Speed Electronics and Systems, 14 (3), pp. 732-737.

4.     S. Rajan, H. Xing, D. Jena, S. DenBaars, U. K. Mishra, "An AlGaN/GaN Polarization-Doped Field-Effect Transistor for Microwave Power Applications," Appl. Phy. Lett. 84 (9), pp. 1591-1593.

3.     S. Rajan, P. Waltereit, C. Poblenz, S. J. Heikman, D. S. Green, J. S. Speck, U. K. Mishra, "Power Performance of AlGaN/GaN HEMTs grown on SiC by Plasma-Assisted MBE," IEEE Electron Device Letters, 25 (5), pp. 247-249.

2.     C. Poblenz, P. Waltereit, S. Rajan, S. J. Heikman, U. K. Mishra, J. S. Speck, "Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors," Journal of Vacuum Science & Technology B, 22(3), pp.1145-1149.

1.     P. Waltereit, C. Poblenz, S. Rajan, F. Wu, U. K. Mishra, J. S. Speck, "Structural Properties of GaN Buffer Layers on 4H-SiC(0001) Grown by Plasma-Assisted Molecular Beam Epitaxy for High Electron Mobility Transistors," Japanese Journal of Applied Physics, 43 (12A), pp. L1520-L1523