Dept. of Electrical and Computer Engineering,
Dept. of Materials Science Engineering.
Post Doctoral Researchers
Hareesh received his Ph.D. from the Centre for Nano Science and Engineering, Indian Institute of Science, Bengaluru, India in 2017 working on MOCVD growth and devices based on III-Nitrides. Subsequently he was a Postdoctoral Research Associate at the School of Physics, University of Bristol, Bristol, UK from 2016-2018 where he worked on the device and reliability physics of GaN-on-Si electronic devices. He joined the Electron Devices Laboratory in Dec 2018 as a Postdoctoral Researcher where his research interests are in the device design, epitaxial growth and characterization of III-Nitride and Oxide based heterostructures.
Andreas studied physics at the Humboldt-Universität zu Berlin and did his Bachelor about X-ray characterization of condensed matter and his Master about electrical characterization of thin films in 2012 and 2013, respectively. Afterwards, he worked as a research assistant at the Humboldt-Universität zu Berlin for 16 months focusing on teaching and maintaining the labs. From 2015 to 2019 he did his PhD research at the Leibniz-Institute for crystal growth about the optical and electrical characterization of β-Ga2O3 and the further development of this material. He finally received his Dr. rer. nat. from the Humboldt-Universität zu Berlin in experimental physics in 2019. Andreas joined Prof. Siddharth Rajan’s group in January 2020 to bring in his expertise about material growth and characterization, and to expand his knowledge about devices by integrating β-Ga2O3 in high power electronics.
Zane Jamal-Eddine received his B.S. in Electrical & Electronic Engineering from The Ohio State University, in 2016. He joined Prof. Rajan’s group as an undergraduate in 2014 , and now he is a PhD candidate. His research interests include Nitride MBE growth and improvement of efficiency in deep-ultraviolet LED devices.
Wahidur received his B.Sc. and M.Sc. in Electrical and Electronic Engineering (EEE) from Bangladesh University of Engineering and Technology (BUET), Dhaka, Bangladesh, in 2013 and 2016 respectively. He was a Lecturer in EEE Department of Islamic University of Technology (IUT), Gazipur, Bangladesh from 2014. He joined Prof. Rajan’s group as Ph.D. student in August, 2016. His research interests include III-nitrides semiconductor devices, development of HEMT for power application, and device engineering.
Md Shahadat Hasan Sohel joined Prof Rajan's group in January 2017. His research focuses on channel engineering of GaN HEMTs for high frequency and improved linearity. He completed his BS and MS in Electrical and Electronic Engineering from Bangladesh University of Engineering and Technology (BUET) in 2012 and 2015 respectively. He worked as a lecturer at the same university after graduation before joining OSU.
Towhidur Razzak has been working as a PhD student with Prof. Siddharth Rajan since July 2017. His research focuses on the fabrication of high-composition AlGaN channel transistors for mm-wave applications. Before joining OSU, Towhid worked at Micron as a Product Yield Analysis Engineer working on the probe testing and failure analysis of commodity and Mobile DRAM. Towhid holds a Bachelor of Engineering (B.Eng.) degree in Electrical Engineering from the National University of Singapore.
Nidhin Kurian Kalarickal
Nidhin joined the group as a PhD student in Fall 2017. His work focuses on MBE growth of Ga2O3/(Al,Ga)2O3 heterostructures for high voltage, high power devices. He completed his undergraduate studies at Indian Institute of Science, Bangalore with a major in Materials Science and minor in Physics
Caiyu Wang joined Prof. Rajan’s group in July 2017. His current research focuses on extreme permittivity materials and AlGaN/GaN HEMTs integration for high frequency RF amplifier applications. Before joining the group, he received his Bachelor of Science degree in Optical Engineering from Zhejiang University, China in 2013. He then received the Master of Science degree in Electrical Engineering from the University of Southern California. From 2015 to 2017, he worked as a Ph.D. student with Prof. Volakis at the ElectroScience Lab of the Ohio State University.
Wyatt Moore received his B.S. in Electrical & Electronic Engineering from University of Washington (Bothell) 2016. He joined Prof. Rajan’s group as a PhD student in fall 2018. Before joining OSU, he worked as a manufacturing engineer for Crane Aerospace & Electronics in Washington. His research interests include Ga2O3 vertical power devices.
Hyunsoo Lee received his B.S. and M.S. in Electrical & Electronic Engineering from Dankook University, Korea, in 2014 and 2016, respectively. He joined Prof. Rajan’s group as a PhD student in Fall 2018. Before joining OSU, he worked as a researcher at Electronics and Telecommunications Research Institute (ETRI) in Korea. His research interests include GaN vertical power devices.
Amber received B.E.’s in Electrical Engineering and Biomedical Engineering from Vanderbilt University in 2018 and began doctoral studies at OSU in the same year.
Ashok Dheenan joined Professor Rajan’s group in May 2019. He received his B.S. in Electrical & Computer Engineering from The Ohio State University in December 2018. Currently, he is pursuing the M.S. degree in ECE with a research interest in the modeling, characterization and design of Gallium nitride HEMT IC’s. He was born in Toledo, OH and grew up in Cincinnati.
Zeltzin Reyes received her B.S. in Mechanical Engineering from Midwestern State University in 2018. She then joined Dr. Rajan's group in the summer of 2019 as a PhD student.
Tae Young Kim
Taeyoung Kim received his B.S. in Physics from Sungkyunkwan University, in 2010 and his M.S. in physics from Seoul National University in 2013. He had worked in Samsung Electro-Mechanics as a researcher from 2013 to 2018. He joined Prof. Ragan's group as a PhD candidate in 2019. His research interests include electron emitter and vacuum transistor.
Adithya joined Prof. Rajan’s group in August 2019 and is pursuing M.S. in ECE. He received his B.E. in Electronics and Communication Engineering from Anna University, India in 2019.
Sushovan joined the group as a PhD student in spring 2020. His work focuses on vertical Ga2O3 devices for high voltage and high power application. He completed BS with Physics Honors from West Bengal State University (2015) and MS-M.Tech in Physics and Material Science with specialization in Nanotechnology from Indian Institute of Technology, Bombay (2019).
Kevin is an undergraduate student at The Ohio State University pursuing a B.S. in ECE with a math minor. He had his first research experience with Prof. Rajan’s group in the summer of 2019.
Yumo is an undergraduate student in the Ohio State University, majoring in material science and engineering. In high school, she has research experience of fabricating rare earth phosphors in Sun Yat-sen University in China. She joined Professor Rajan’s group in the spring of 2019.
Dr. Choong Hee Lee - NREL
Dr. Yuewei Zhang - Apple
Dr. Sanyam Bajaj - Intel
Dr. Sriram Krishnamoorthy, Assistant Professor, Elect & Computer Engineering, University of Utah
Dr. Fatih Akyol - Assistant Professor, Yildiz Technical University, Istanbul
Sadia K. Monika - Intel
Dr. Edwin Lee, OSU College of Engineering
Dr. Digibjoy Nath: Assistant Professor, Indian Institute of Science
Dr. Pil Sung Park: Navitas Semiconductor Inc.
Dr. Ting-Hsiang Hung: Intel
Omor Faruk Shoron: Ph.D. Student, UC Santa Barbara
Dr. Prashanth Ramesh: Qorvo
Dr. Masihhur Laskar: Micron Technology
Dr. Mohamed Boucherit: Teledyne Dalsa Semiconductor
Dr. Michele Esposto: Udine, Friuli-Venezia Giulia, Italy