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Principal Investigator


 Siddharth Rajan

  Dept. of Electrical and Computer Engineering,
  Dept. of Materials Science Engineering.




Post Doctoral Researchers

Hareesh Chandrasekar

Hareesh received his Ph.D. from the Centre for Nano Science and Engineering, Indian Institute of Science, Bengaluru, India in 2017 working on MOCVD growth and devices based on III-Nitrides. Subsequently he was a Postdoctoral Research Associate at the School of Physics, University of Bristol, Bristol, UK from 2016-2018 where he worked on the device and reliability physics of GaN-on-Si electronic devices. He joined the Electron Devices Laboratory in Dec 2018 as a Postdoctoral Researcher where his research interests are in the device design, epitaxial growth and characterization of III-Nitride and Oxide based heterostructures.


Graduate students

Zhanbo Xia

Zane Jamal-Eddine

Zane Jamal-Eddine received his B.S. in Electrical & Electronic Engineering from The Ohio State University, in 2016. He joined Prof. Rajan’s group as an undergraduate in 2014 , and now he is a PhD candidate. His research interests include Nitride MBE growth and improvement of efficiency in deep-ultraviolet LED devices.

Mohammad Wahidur Rahman

Wahidur received his B.Sc. and M.Sc. in Electrical and Electronic Engineering (EEE) from Bangladesh University of Engineering and Technology (BUET), Dhaka, Bangladesh, in 2013 and 2016 respectively. He was a Lecturer in EEE Department of Islamic University of Technology (IUT), Gazipur, Bangladesh from 2014. He joined Prof. Rajan’s group as Ph.D. student in August, 2016. His research interests include III-nitrides semiconductor devices, development of HEMT for power application, and device engineering.

Shahadat Hasan Sohel

Md Shahadat Hasan Sohel joined Prof Rajan's group in January 2017. His research focuses on channel engineering of GaN HEMTs for high frequency and improved linearity. He completed his BS and MS in Electrical and Electronic Engineering from Bangladesh University of Engineering and Technology (BUET) in 2012 and 2015 respectively. He worked as a lecturer at the same university after graduation before joining OSU. 

Towhidur Razzak

Towhidur Razzak has been working as a PhD student with Prof. Siddharth Rajan since July 2017. His research focuses on the fabrication of high-composition AlGaN channel transistors for mm-wave applications. Before joining OSU, Towhid worked at Micron as a Product Yield Analysis Engineer working on the probe testing and failure analysis of commodity and Mobile DRAM. Towhid holds a Bachelor of Engineering (B.Eng.) degree in Electrical Engineering from the National University of Singapore.

Nidhin Kurian ​Kalarickal

Nidhin joined the group as a PhD student in Fall 2017. His work focuses on MBE growth of Ga2O3/(Al,Ga)2O3 heterostructures for high voltage, high power devices. He completed his undergraduate studies at Indian Institute of Science, Bangalore with a major in Materials Science and minor in Physics

Caiyu Wang

Caiyu Wang joined Prof. Rajan’s group in July 2017. His current research focuses on extreme permittivity materials and AlGaN/GaN HEMTs integration for high frequency RF amplifier applications. Before joining the group, he received his Bachelor of Science degree in Optical Engineering from Zhejiang University, China in 2013. He then received the Master of Science degree in Electrical Engineering from the University of Southern California. From 2015 to 2017, he worked as a Ph.D. student with Prof. Volakis at the ElectroScience Lab of the Ohio State University.

Wyatt Moore

Wyatt Moore received his B.S. in Electrical & Electronic Engineering from University of Washington (Bothell) 2016. He joined Prof. Rajan’s group as a PhD student in fall 2018. Before joining OSU, he worked as a manufacturing engineer for Crane Aerospace & Electronics in Washington. His research interests include Ga2O3 vertical power devices.

Hyunsoo Lee

Hyunsoo Lee received his B.S. and M.S. in Electrical & Electronic Engineering from Dankook University, Korea, in 2014 and 2016, respectively. He joined Prof. Rajan’s group as a PhD student in Fall 2018. Before joining OSU, he worked as a researcher at Electronics and Telecommunications Research Institute (ETRI) in Korea. His research interests include GaN vertical power devices.

Amber Arquitola

Amber received B.E.’s in Electrical Engineering and Biomedical Engineering from Vanderbilt University in 2018 and began doctoral studies at OSU in the same year. 

Ashok Dheenan

Ashok Dheenan joined Professor Rajan’s group in May 2019. He received his B.S. in Electrical & Computer Engineering from The Ohio State University in December 2018. Currently, he is pursuing the M.S. degree in ECE with a research interest in the modeling, characterization and design of Gallium nitride HEMT IC’s. He was born in Toledo, OH and grew up in Cincinnati.

Zeltzin Reyes

Zeltzin Reyes received her B.S. in Mechanical Engineering from Midwestern State University in 2018. She then joined Dr. Rajan's group in the summer of 2019 as a PhD student.  



Dr. Choong Hee Lee - NREL

Chandan Joishi

Dr. Yuewei Zhang - Post Doctoral Researcher, UCSB, California.

Dr. Sanyam Bajaj - Intel corporation 

Dr. Sriram Krishnamoorthy, Assistant Professor, Elect & Computer Engineering, University of Utah

Dr. Fatih Akyol - Assistant Professor, Yildiz Technical University, Istanbul

Sadia K. Monika - Intel corporation

Gurudatt Rao

Dr. Edwin Lee, OSU College of Engineering

Dr. Digibjoy Nath: Assistant Professor, Indian Institute of Science

Dr. Pil Sung Park: Navitas Semiconductor Inc.

Dr. Ting-Hsiang Hung: Senior Engineer, IBM/Global Foundries

Omor Faruk Shoron: Graduate Student, USCB

Dr. Prashanth Ramesh: Design Engineer, Triquint Semiconductor

Dr. Masihhur Laskar: Post-Doctoral Researcher, University of Wisconsin, Madison

Dr. Mohamed Boucherit: Post-doctoral Researcher, Simon Fraser University

Dr. Michele Esposto: Udine, Friuli-Venezia Giulia, Italy